Solution process of graphene-induced ohmic contact between the metal and AlGaN/GaN for hemts application
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https://doi.org/10.15625/2525-2518/19751Keywords:
high electron mobility transistors (HEMTs), graphene, AlGaN/GaN, ohmic contactAbstract
This work demonstrates an AlGaN/GaN high electron mobility transistor (HEMT) with Cr/Graphene ohmic contacts constructed without heat treatment. The Cr/Graphene ohmic contact was fabricated using a spray-coated graphene nanoflakes solution and electron-beam-evaporated Cr. This method does not require a high-temperature annealing step in conventional Ti/Al/Ni/Au ohmic contact. It is suggested that the Cr/graphene combination acts similarly to a doped n-type semiconductor in contact with AlGaN/GaN heterostructures, enabling carrier transport to the AlGaN layer. The investigated Au/Cr/ Graphene/AlGaN/GaN HEMT device exhibits ohmic drain characteristics in the range of -4 V to 4 V of drain-source voltage with a calculated contact resistance density of 2.5 mΩcm2. Our results have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.
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References
Ma C. T., Gu Z. H. - Review of GaN HEMT Applications in Power Converters over 500 W, Electronics 8 (2019) 1401. DOI: https://doi.org/10.3390/electronics8121401
Yu C., Wang F., He J., Zhang Y., Sun R., Xu W., Ding G., Feng Q., Wang X., Wang Y., He M., Chen W., Jia H., Chen H. - High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current, ECS Journal of Solid State Science and Technology 11 (2022) 085009. DOI: https://doi.org/10.1149/2162-8777/ac8a71
Remesh N., Chandrasekar H., Venugopalrao A., Raghavan S., Rangarajan M., Nath D. N. - Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications, Journal of Applied Physics 130 (2021) DOI: https://doi.org/10.1063/5.0045952
Sahebghalam N., Shalchian M., Chalechale A., Jazaeri F. - High-Temperature HEMT Model, IEEE Transactions on Electron Devices 69 (2022) 4821-4827. DOI: https://doi.org/10.1109/TED.2022.3184662
Lu S., Burgos R., Lu G. Q. - Packaging and high-temperature characterization of a 650 V, 150 A eGaN HEMT, Semiconductor Science and Technology 36 (2021) 034006. DOI: https://doi.org/10.1088/1361-6641/abdf2a
Islam N., Mohamed M. F. P., Khan M. F. A. J., Falina S., Kawarada H., Syamsul M. - Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review, Crystals 12 (11) (2022)1581. DOI: https://doi.org/10.3390/cryst12111581
Haziq M., Falina S., Manaf A. A., Kawarada H., Syamsul M. - Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review, Micromachines 13 (2022) 2133. DOI: https://doi.org/10.3390/mi13122133
Mounika B., Ajayan J., Bhattacharya S., Nirmal D. - Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review, Micro and Nanostructures 168 (2022) 207317. DOI: https://doi.org/10.1016/j.micrna.2022.207317
Chen D., Wan L., Li J., Liu Z., Li G. - Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface, Solid-State Electronics 151 (2019) 60-64. DOI: https://doi.org/10.1016/j.sse.2018.10.012
Sung Park P., Reddy K. M., Nath D. N., Yang Z., Padture N. P., Rajan S. - Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion, Applied Physics Letters 102 (2013) DOI: https://doi.org/10.1063/1.4801940
Chem T., Moosa A., Abed M. - Graphene preparation and graphite exfoliation, Turkish Journal of Chemistry 45 (2021) 493-519. DOI: https://doi.org/10.3906/kim-2101-19
Reichardt S., Wirtz L. - Raman Spectroscopy of Graphene, arXiv: Mesoscale and Nanoscale Physics (2017) DOI: https://doi.org/10.1142/9789813148758_0003
Insta NANO, Graphene Number of Layers Calculator From ID/IG and I2D/IG Ratio via Raman Spectroscopy, https://instanano.com/all/characterization/raman/graphene-layers/ (accessed 1st September 2023).
Sarac B., Stephens D., Eisener J., Rosselló J., Mettin R. - Cavitation bubble dynamics and sono chemiluminescence activity inside sonicated submerged flow tubes, 2020. DOI: https://doi.org/10.1016/j.cep.2020.107872
Arao Y., Mori F., Kubouchi M. - Efficient solvent systems for improving production of few-layer graphene in liquid phase exfoliation, Carbon 118 (2017) DOI: https://doi.org/10.1016/j.carbon.2017.03.002
Pandit B., Seo T., Ryu B., Cho J. - Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions, AIP Advances 6 (2016) 065007. DOI: https://doi.org/10.1063/1.4953917
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