Impact of Hysteresis Curve on Subthreshold Swing in Ferroelectric FET

Hakkee Jung

doi:10.15625/2525-2518/18627

Author affiliations

Authors

Hakkee Jung Department of Electronic Eng., Kunsan National University, Gunsan, South Korea 54150 https://orcid.org/0000-0002-2828-2957

DOI:

https://doi.org/10.15625/2525-2518/18627

Keywords:

Subthreshold swing, Junctionless, Ferroelectric, Remanent polarization, Coercive field

Abstract

The changes in Subthreshold Swing (SS) were observed for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in Ferrolectric FET (FeFET). A multilayer structure of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) was used for the junctionless double gate structure. To obtain the SS value, the analytical SS model was used. The ranges of 15≤P_r≤30 μC/cm² and 0.8≤E_c≤1.5 MV/cm, which were reasonable in various experiments and did not generate unstable regions in the relationship of drain current and gate voltage, were considered. As a result, the SS decreased as P_r decreased and E_c increased due to the capacitance change in the ferroelectric. This phenomenon is because the controllability of channel carriers by the gate voltage increases due to the increasing of change in the ferroelectric voltage for the gate voltage as P_r decreases and the memory window increases. Since the SS decreased linearly in the memory window, the SS constantly changed according to the ratio of P_r and E_c, P_r/E_c. As the ferroelectric thickness increased, the SS decreased significantly, but the change of SS with respect to the P_r/E_c was severe. In general, as the channel length decreases, SS increases. However, when the P_r/E_c decreased to 10 pF/cm, the SS tended to decrease as the channel length decreased. The reason for this can be attributed to the fact that the relative thickness of ferroelectric increases with small channel length.

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