A facile way to optimize photoelectric properties of SnSe nanosheets via sonication assisted liquid-phase exfoliation

Thiet Van Duong; Dung Dinh Nguyen; Hong Tuan Nguyen; Nhat Van Pham; Nguyen Xuan Chung; Bac Huu Luong; Hong Ngoc Phan

doi:10.15625/2525-2518/16878

Author affiliations

Authors

Thiet Van Duong Graduate University of Science and Technology, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Ha Noi, Viet Nam
Dung Dinh Nguyen Center for High Technology Development, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Ha Noi, Viet Nam
Hong Tuan Nguyen Center for High Technology Development, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Ha Noi, Viet Nam
Nhat Van Pham Department of Advanced Materials Science and Nanotechnology, University of Science and Technology Hanoi, Ha Noi, Viet Nam
Nguyen Xuan Chung Department of Physics, Hanoi University of Mining and Geology, Ha Noi,Viet Nam
Bac Huu Luong School of Engineering Physics, Hanoi University of Science and Technology, Ha Noi, Viet Nam
Hong Ngoc Phan Center for High Technology Development, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Ha Noi, Viet Nam

DOI:

https://doi.org/10.15625/2525-2518/16878

Keywords:

SnSe nanosheets, sonication-assisted exfoliation, photodetector, two dimensional materials

Abstract

Layer-structured SnSe is known as a potential semiconductive material because it is not toxic, relatively abundant in the earth crust and possess unique electronic, optoelectronic properties. This material is also broadly used for many applications such as photodetector, fire detector, thermoelectric devices, energy storing equipment, etc. Its properties can be tuned by changing fabrication methods. In this work, we report on the process of fabricating SnSe nanosheets (SnSe NSs) in a thin film by using a sonication-assisted exfoliation method and a transferring process of SnSe NSs to a SiO₂/Si substrate for photoelectric characterization. The properties of fabricated thin film was characterized by X-ray diffraction, Raman spectroscopy, Atomic Force Microscopy, Scanning Electric Sspectroscopy and photoelectrical conduction measurement. The obtained results show the optimal exfoliation conditions with a duration of 24 hours and an SnSe NS thickness of 2.5 nm. The highest photoresponsivity isapproximate 65 mAW⁻¹ and response time is found around 0.95 s for the case of 62.5 µm SnSe film’s thickness. The photocurrent is approximately linear illumination-intensity dependent with an ideal factor of 0.87 under a constant bias of 2.0V and an exciation wavelength of 450 nm. We introduce a simple method of fabrication and controllable photoelectric properties of SnSe NSs.

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