Broadband GaAs pHemt LNA design for T/R module application

Phong Dai Le; Vu Duy Thong; Pham Le Binh

doi:10.15625/0866-708X/54/5/6978

Broadband GaAs pHemt LNA design for T/R module application

Phong Dai Le, Vu Duy Thong, Pham Le Binh

Author affiliations

Authors

Phong Dai Le Le Quy Don Technical University
Vu Duy Thong
Pham Le Binh

DOI:

https://doi.org/10.15625/0866-708X/54/5/6978

Keywords:

LNA, T/R Module, X-Band, MMIC, GaAs, radar, integrated circuit.

Abstract

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.

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Published

19-10-2016

How to Cite

[1]

P. D. Le, V. D. Thong, and P. L. Binh, “Broadband GaAs pHemt LNA design for T/R module application”, Vietnam J. Sci. Technol., vol. 54, no. 5, p. 584, Oct. 2016.

IEEE

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Issue

Vol. 54 No. 5 (2016)

Section

Articles

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