Transparent conducting oxide films with p-type characteristics derived from sol-gel dip-coating of LaF3- and CeF3-doped tin oxides

Van-Da Dao; Quang-Phu Tran; Van-Hoi Pham

doi:10.15625/2525-2518/20042

Author affiliations

Authors

Van-Da Dao Department of Electrical and Electronic Engineering, Hung Yen University of Technology and Education, Vietnam https://orcid.org/0009-0009-9203-7751
Quang-Phu Tran Hung Yen University of Technology and Education https://orcid.org/0000-0001-7419-8038
Van-Hoi Pham Institute of Materials Science, Vietnam Academy of Science and Technology, Vietnam

DOI:

https://doi.org/10.15625/2525-2518/20042

Keywords:

Rare-earth tri-fluoride doped tin oxide films, p-type transparent conducting oxide films, sol-gel dip-coating method, optical and electrical properties

Abstract

Transparent semiconductor oxide films, typically based on doped indium tin oxide, find widespread use in optoelectronic devices. Tin oxide films inherently exhibit n-type conductivity. Achieving efficient p-type tin oxide film electrodes is a challenging task for applications in p-n based photonic devices. In this investigation, we introduce innovative p-type transparent films whose optical transmittance and electrical conductivity can be adjusted by doping tin oxide films with various rare-earth triflouride compouds such as LaF₃ and/or CeF₃ using sol-gel dip-coating method. The p-type conductance of the thin films is confirmed through Hall effect and Seebeck coefficient measurements. The results obtained indicate that the LaF₃- and CeF₃-doped SnO₂ film exhibits a transmittance of 85.1% and 80.9% at a wavelength of 550 nm, a low electrical resistivity of 8.68 × 10^–3 Ωcm and 1.70 ´ 10^–2Ωcm, and a high figure-of-merit of 6.59 × 10^–4 Ω⁻¹ and 1.74 ´ 10^–4Ω⁻¹, respectively, making them highly suitable for applications in optoelectronics.

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