Vol. 24 No. 2 (2014)
Papers

Temperature dependent magnetization of the two band model for diluted magnetic semiconductors

Vu Kim Thai
University of Economic and Technical Industries
Hoang Anh Tuan
Institute of Physics - Vietnam Academy of Science and Technology

Published 09-07-2014

Keywords

  • magnetization,
  • diluted magnetic semiconductors,
  • two-band model,
  • coherent potential approximation

How to Cite

Thai, V. K., & Tuan, H. A. (2014). Temperature dependent magnetization of the two band model for diluted magnetic semiconductors. Communications in Physics, 24(2), 141. https://doi.org/10.15625/0868-3166/24/2/4043

Abstract

The temperature dependent magnetization of a two band model for diluted magnetic semiconductors as a function of magnetic coupling constant, hopping parameters and carrier densities is calculated by using the coherent potential approximation.  It is shown that the degree of overlapping of the impurity bands  and carrier density are crucial parameters determining the magnetization behavior of the system.

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