Temperature dependent magnetization of the two band model for diluted magnetic semiconductors

Authors

  • Vu Kim Thai University of Economic and Technical Industries
  • Hoang Anh Tuan Institute of Physics - Vietnam Academy of Science and Technology

DOI:

https://doi.org/10.15625/0868-3166/24/2/4043

Keywords:

magnetization, diluted magnetic semiconductors, two-band model, coherent potential approximation

Abstract

The temperature dependent magnetization of a two band model for diluted magnetic semiconductors as a function of magnetic coupling constant, hopping parameters and carrier densities is calculated by using the coherent potential approximation.  It is shown that the degree of overlapping of the impurity bands  and carrier density are crucial parameters determining the magnetization behavior of the system.

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References

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Published

09-07-2014

How to Cite

Thai, V. K., & Tuan, H. A. (2014). Temperature dependent magnetization of the two band model for diluted magnetic semiconductors. Communications in Physics, 24(2), 141. https://doi.org/10.15625/0868-3166/24/2/4043

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