Effect of the direct exchange interaction between magnetic impurities on magnetization in diluted magnetic semiconductors

Vu Kim Thai; Le Duc Anh; Hoang Anh Tuan

doi:10.15625/0868-3166/22/1/186

Effect of the direct exchange interaction between magnetic impurities on magnetization in diluted magnetic semiconductors

Vu Kim Thai, Le Duc Anh, Hoang Anh Tuan

Author affiliations

Authors

Vu Kim Thai Institute of Physics, VAST
Le Duc Anh Hanoi National University of Education
Hoang Anh Tuan Institute of Physics, VAST

DOI:

https://doi.org/10.15625/0868-3166/22/1/186

Keywords:

CPA, diluted magnetic semicoductors, magnetization

Abstract

We consider a model of III-V diluted magnetic semiconductors where both of the exchange interaction between carrier and impurity spins, and the direct exchange interaction between magnetic impurities are taken into account. The magnetization as a function of temperature for a wide range of model parameters is calculated and discussed. We show that for a degenerate carrier system the suppression of the magnetization is sensitive to the antiferromagnetic coupling constant and the impurity concentration.

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Published

07-05-2012

How to Cite

[1]

V. K. Thai, L. D. Anh, and H. A. Tuan, “Effect of the direct exchange interaction between magnetic impurities on magnetization in diluted magnetic semiconductors”, Comm. Phys., vol. 22, no. 1, pp. 53–58, May 2012.

IEEE

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Issue

Vol. 22 No. 1 (2012)

Section

Papers

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