Effect of the direct exchange interaction between magnetic impurities on magnetization in diluted magnetic semiconductors

Authors

  • Vu Kim Thai Institute of Physics, VAST
  • Le Duc Anh Hanoi National University of Education
  • Hoang Anh Tuan Institute of Physics, VAST

DOI:

https://doi.org/10.15625/0868-3166/22/1/186

Keywords:

CPA, diluted magnetic semicoductors, magnetization

Abstract

We consider a model of III-V diluted magnetic semiconductors where both of the exchange interaction between carrier and impurity spins, and the direct exchange interaction between magnetic impurities are taken into account. The magnetization as a function of temperature for a wide range of model parameters is calculated and discussed. We show that for a degenerate carrier system the suppression of the magnetization is sensitive to the antiferromagnetic coupling constant and the impurity concentration.

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Author Biography

Le Duc Anh, Hanoi National University of Education

Department of Physics

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Published

07-05-2012

How to Cite

Thai, V. K., Anh, L. D., & Tuan, H. A. (2012). Effect of the direct exchange interaction between magnetic impurities on magnetization in diluted magnetic semiconductors. Communications in Physics, 22(1), 53–58. https://doi.org/10.15625/0868-3166/22/1/186

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