Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling

Authors

  • Hoang Anh Tuan Institute of Physics, Vietnam Academy of Science and Technology
  • Nguyen Thi Hai Yen Institute of Physics Vietnam Academy of Science and Technology

DOI:

https://doi.org/10.15625/0868-3166/26/2/8487

Keywords:

metal-insulator transition, phase diagram, disordered Hubbard model

Abstract

The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory.

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Author Biography

Hoang Anh Tuan, Institute of Physics, Vietnam Academy of Science and Technology

Center for Theoretical Physics

References

K. Byczuk, M.Ulmke, and D.Vollhardt, Phys. Rev. Lett. 90 (2003) 196403.

K. Byczuk, M.Ulmke, Eur. Phys. J. B 45 (2005) 449.

K. W. Kim et al., Phys. Rev. B 71 (2005) 125104.

P. Lombardo, J. C. Guisiano, R. Hayn, Physica B 403 (2008) 3485.

K. Elk, Ann. Phys. (Leipzig) 33 (1976) 275.

B. Velicky, S. Kirkpatrick, and H. Ehremreich, Phys. Rev. 175 (1968)747.

A. Garg, H. R. Krishnamurthy, and M. Randeria, Phys. Rev. Lett. 97 (2006) 046403.

L. Craro, et al., Phys. Rev. B 78 (2008) 075121.

K. Byczuk, et al., Phys. Rev. B 79 (2009) 121103 (R).

A. T. Hoang, J. Phys.: Cond. Matt. 22 (2010) 095602.

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Published

21-09-2016

How to Cite

Tuan, H. A., & Yen, N. T. H. (2016). Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling. Communications in Physics, 26(2), 159. https://doi.org/10.15625/0868-3166/26/2/8487

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