Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling

Hoang Anh Tuan; Nguyen Thi Hai Yen

doi:10.15625/0868-3166/26/2/8487

Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling

Hoang Anh Tuan, Nguyen Thi Hai Yen

Author affiliations

Authors

Hoang Anh Tuan Institute of Physics, Vietnam Academy of Science and Technology
Nguyen Thi Hai Yen Institute of Physics Vietnam Academy of Science and Technology

DOI:

https://doi.org/10.15625/0868-3166/26/2/8487

Keywords:

metal-insulator transition, phase diagram, disordered Hubbard model

Abstract

The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory.

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...

References

K. Byczuk, M.Ulmke, and D.Vollhardt, Phys. Rev. Lett. 90 (2003) 196403. DOI: https://doi.org/10.1103/PhysRevLett.90.196403

K. Byczuk, M.Ulmke, Eur. Phys. J. B 45 (2005) 449. DOI: https://doi.org/10.1140/epjb/e2005-00216-2

K. W. Kim et al., Phys. Rev. B 71 (2005) 125104. DOI: https://doi.org/10.1103/PhysRevA.71.014102

P. Lombardo, J. C. Guisiano, R. Hayn, Physica B 403 (2008) 3485. DOI: https://doi.org/10.1016/j.physb.2008.05.010

K. Elk, Ann. Phys. (Leipzig) 33 (1976) 275. DOI: https://doi.org/10.1002/andp.19764880405

B. Velicky, S. Kirkpatrick, and H. Ehremreich, Phys. Rev. 175 (1968)747. DOI: https://doi.org/10.1103/PhysRev.175.747

A. Garg, H. R. Krishnamurthy, and M. Randeria, Phys. Rev. Lett. 97 (2006) 046403. DOI: https://doi.org/10.1103/PhysRevLett.97.046403

L. Craro, et al., Phys. Rev. B 78 (2008) 075121. DOI: https://doi.org/10.1103/PhysRevB.78.075121

K. Byczuk, et al., Phys. Rev. B 79 (2009) 121103 (R). DOI: https://doi.org/10.1103/PhysRevB.79.121103

A. T. Hoang, J. Phys.: Cond. Matt. 22 (2010) 095602. DOI: https://doi.org/10.1088/0953-8984/22/9/095602

Downloads

Published

21-09-2016

How to Cite

[1]

H. A. Tuan and N. T. H. Yen, “Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling”, Comm. Phys., vol. 26, no. 2, p. 159, Sep. 2016.

IEEE

Download Citation

Issue

Vol. 26 No. 2 (2016)

Section

Papers

License

Authors who publish with CIP agree with the following terms:

The manuscript is not under consideration for publication elsewhere. When a manuscript is accepted for publication, the author agrees to automatic transfer of the copyright to the editorial office.
The manuscript should not be published elsewhere in any language without the consent of the copyright holders. Authors have the right to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal’s published version of their work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
Authors are encouraged to post their work online (e.g., in institutional repositories or on their websites) prior to or during the submission process, as it can lead to productive exchanges or/and greater number of citation to the to-be-published work (See The Effect of Open Access).