Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling

Hoang Anh Tuan, Nguyen Thi Hai Yen
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Authors

  • Hoang Anh Tuan Institute of Physics, Vietnam Academy of Science and Technology
  • Nguyen Thi Hai Yen Institute of Physics Vietnam Academy of Science and Technology

DOI:

https://doi.org/10.15625/0868-3166/26/2/8487

Keywords:

metal-insulator transition, phase diagram, disordered Hubbard model

Abstract

The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory.

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References

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Published

21-09-2016

How to Cite

[1]
H. A. Tuan and N. T. H. Yen, “Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling”, Comm. Phys., vol. 26, no. 2, p. 159, Sep. 2016.

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Papers
Received 12-07-2016
Accepted 15-09-2016
Published 21-09-2016

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