Effect of Spontaneous Polarization Charges on the Electron Mobility in ZnO Surface Quantum Wells

Nguyen Thanh Tien, Le Tuan, Doan Nhat Quang
Author affiliations

Authors

  • Nguyen Thanh Tien College of Science, Can Tho University
  • Le Tuan Institute of Engineering Physics, Hanoi University of Technology
  • Doan Nhat Quang Institute of Physics, VAST

DOI:

https://doi.org/10.15625/0868-3166/19/4/6403

Keywords:

two-dimensional electron gas, surface quantum well

Abstract

We present a theoretical study of the effect due to spontaneous polarization of ZnO on the low-temperature mobility of the two-dimensional electron gas (2DEG) in a ZnO surface quantum well (SFQW). We proved that for the O-polar face this causes an attraction of electrons by the positive charges bound on the surface, while for the Zn-polar face a repulsion of them far away therefrom by the negative bound charges of the same magnitude. Accordingly, surface roughness scattering is drastically enhanced in the former case, but reduced in the latter one. Therefore, the low-% temperature 2DEG mobility in ZnO SFQWs with O-polar face is found to be dominated by surface roughness. Our theory was illustrated for the sample prepared by bombardment of the O-polar face by 100-eV hydrogen ions. The surface roughness scattering enables an explanation of the 2DEG mobility, especially, the reason of low values for the mobility in the dependence from the carrier density which has not been understood when starting from impurity scattering.

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Published

03-06-2015

How to Cite

[1]
N. T. Tien, L. Tuan, and D. N. Quang, “Effect of Spontaneous Polarization Charges on the Electron Mobility in ZnO Surface Quantum Wells”, Comm. Phys., vol. 19, no. 4, Jun. 2015.

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Section

Papers
Published 03-06-2015