The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method

Tran Thi Hai; Nguyen Trung Hong; Nguyen Huyen Tung; Doan Nhat Quang

doi:10.15625/0868-3166/20/4/2528

The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method

Tran Thi Hai, Nguyen Trung Hong, Nguyen Huyen Tung, Doan Nhat Quang

Author affiliations

Authors

Tran Thi Hai Department of Engineering and Technology, Hong Duc University
Nguyen Trung Hong Institute of Engineering Physics, Hanoi University of Technology
Nguyen Huyen Tung Institute of Engineering Physics, Hanoi University of Technology
Doan Nhat Quang Center for Theoretical Physics, Institute of Physics, VAST

DOI:

https://doi.org/10.15625/0868-3166/20/4/2528

Abstract

We employ the theory of band-bending effects to explain the channel-width dependence of the mobility of a two-dimentional hole gas (2DHG) in narrow square Si/Si\(_{1-x}\)Ge\(_x\)/Si quantum well at high Ge content. The numerical calculation of scattering mechanisms is shown in comparison with the ones from the previous computations. Our method enables a better quantitative description of recently measured data about the dependence of the 8 K mobility of holes in a Si/Si\(_{0.2}\)Ge\(_{0.8}\)/Si quantum well on the channel width varying from 25 - 70Å

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Published

01-11-2012

How to Cite

[1]

T. T. Hai, N. T. Hong, N. H. Tung, and D. N. Quang, “The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method”, Comm. Phys., vol. 20, no. 4, p. 319, Nov. 2012.

IEEE

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Issue

Vol. 20 No. 4 (2010)

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Papers

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