Effect from Doping of Quantum Wells on Enhancement of The Mobility Limited by One-Interface Roughness Scattering

Tran Thi Hai; Nguyen Huyen Tung; Nguyen Trung Hong

doi:10.15625/0868-3166/21/3/170

Effect from Doping of Quantum Wells on Enhancement of The Mobility Limited by One-Interface Roughness Scattering

Tran Thi Hai, Nguyen Huyen Tung, Nguyen Trung Hong

Author affiliations

Authors

Tran Thi Hai Hanoi University of Science and Technology
Nguyen Huyen Tung Hanoi University of Science and Technology
Nguyen Trung Hong Hanoi University of Science and Technology

DOI:

https://doi.org/10.15625/0868-3166/21/3/170

Abstract

We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation length. So, we propose two-side doping as an efficient way to upgrade the quality of QWs. The two-interface roughness scattering is also incorporated to make comparison.

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Published

19-09-2011

How to Cite

[1]

T. T. Hai, N. H. Tung, and N. T. Hong, “Effect from Doping of Quantum Wells on Enhancement of The Mobility Limited by One-Interface Roughness Scattering”, Comm. Phys., vol. 21, no. 3, p. 211, Sep. 2011.

IEEE

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Issue

Vol. 21 No. 3 (2011)

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Papers

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