Investigation of the EXAFS Cumulants of Silicon and Germanium Semiconductors by Statistical Moment Method: Pressure Dependence

Ho Khac Hieu; Vu Van Hung; Nguyen Van Hung

doi:10.15625/0868-3166/21/3/174

Investigation of the EXAFS Cumulants of Silicon and Germanium Semiconductors by Statistical Moment Method: Pressure Dependence

Ho Khac Hieu, Vu Van Hung, Nguyen Van Hung

Author affiliations

Authors

Ho Khac Hieu National University of Civil Engineering
Vu Van Hung Hanoi National University of Education
Nguyen Van Hung Hanoi University of Science

DOI:

https://doi.org/10.15625/0868-3166/21/3/174

Abstract

Pressure dependence of Extended X-ray Absorption Fine Structure (EXAFS) cumulants of silicon and germanium have been investigated using the statistical moment method (SMM). Analytical expressions of the first and second cumulants of silicon and germanium have been derived. The equations of states for silicon and germanium semiconductors have been also obtained using which the pressure dependence of lattice constants and volume of these semiconductors have been estimated. Numerical results using the developed theories for these semiconductors are found to be in good and reasonable agreement with those of the other theories and with experiment.

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Published

19-09-2011

How to Cite

[1]

H. K. Hieu, V. V. Hung, and N. V. Hung, “Investigation of the EXAFS Cumulants of Silicon and Germanium Semiconductors by Statistical Moment Method: Pressure Dependence”, Comm. Phys., vol. 21, no. 3, p. 245, Sep. 2011.

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Issue

Vol. 21 No. 3 (2011)

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Papers

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