Photoconductive UV Detectors Based on ZnO Films Prepared by R.F. Magnetron Sputtering Method

Nguyen Viet Tuyen; Ta Dinh Canh; Nguyen Ngoc Long

doi:10.15625/0868-3166/20/1/2008

Photoconductive UV Detectors Based on ZnO Films Prepared by R.F. Magnetron Sputtering Method

Nguyen Viet Tuyen, Ta Dinh Canh, Nguyen Ngoc Long

Author affiliations

Authors

Nguyen Viet Tuyen Hanoi University of Science
Ta Dinh Canh
Nguyen Ngoc Long

DOI:

https://doi.org/10.15625/0868-3166/20/1/2008

Keywords:

R.F. magnetron sputtering, ZnO thin film, Photoconductive UV detector, Ohmic contact, Photo-responsivity.

Abstract

Highly c-axis oriented zinc oxide (ZnO) thin films were deposited on glass substrates by radio frequency (r.f.) sputtering. The photoconductor UV detector based on ZnO films, having a metal-semiconductor-metal (MSM) structure with interdigitation configuration, were fabricated by using aluminium (Al) as a contact metal. The characteristics of dark and photocurrent of the ultraviolet (UV) detector and the UV photo-response of the detector were investigated. The linear current-voltage (I-V) characteristics under both forward and reverse bias exhibit ohmic metal-semiconductor contacts. Under illumination by monochromatic light at a wavelength of 365~nm, the photo-generated current was measured to be 0.56 $\mu$A at a bias of 6 V. The photo-response decay in these devices is slow.

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Published

13-08-2012

How to Cite

[1]

N. V. Tuyen, T. D. Canh, and N. N. Long, “Photoconductive UV Detectors Based on ZnO Films Prepared by R.F. Magnetron Sputtering Method”, Comm. Phys., vol. 20, no. 1, p. 77, Aug. 2012.

IEEE

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Issue

Vol. 20 No. 1 (2010)

Section

Papers

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