Mechanism of Inverse Magnetoresistance in High-\(T_{a}\) Annealed MnNi/Co/Ag(Cu)/Py Spin Valves

Anh Tuan Nguyen, Van Su Luong, Quoc Khanh Hoang, Thi Hoai Dung Tran, Anh Tue Nguyen
Author affiliations

Authors

  • Anh Tuan Nguyen International Training Institute for Materials Science (ITIMS), Hanoi University of Technology (HUT),
  • Van Su Luong ITIMS, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam and Faculty of Electrical and Electronic Engineering, Phenikaa Institute for Advanced Study (PIAS), Phenikaa University
  • Quoc Khanh Hoang ITIMS, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
  • Thi Hoai Dung Tran ITIMS, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
  • Anh Tue Nguyen IEP, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/30/3/13858

Keywords:

Spin valve, magnetic transport, spin-dependent scattering, magnetoresistance (MR), inverse magnetoresistance (IMR).

Abstract

The magnetic transport properties -- magnetoresistive (MR) effects of MnNi/Co/Ag(Cu)/\break Py pinned spin valve structures (SVs) prepared by rf sputtering method and annealed at \(T_{a} = 100\)°C - 500°C for 30 minutes in high vacuum (\(\sim 10^{ - 5}\) torr) are investigated. The received results show a change in the observed MR behaviors from a normal giant magnetoresistance effect to an inverse magnetoresistance effect after annealing at high temperatures, 300°C and 400°C, for these SVs. The origin and mechanism of the IMR behavior are analyzed and discussed. These results will suggest an ability to manufacture SV devices used the IMR effect for enhancing the application capacities for SV-sensor systems.

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22-07-2020

How to Cite

[1]
A. T. Nguyen, V. S. Luong, Q. K. Hoang, T. H. D. Tran, and A. T. Nguyen, “Mechanism of Inverse Magnetoresistance in High-\(T_{a}\) Annealed MnNi/Co/Ag(Cu)/Py Spin Valves”, Comm. Phys., vol. 30, no. 3, p. 279, Jul. 2020.

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Vol. 30 No. 3 (2020)

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Received 05-06-2019
Accepted 03-07-2020
Published 22-07-2020

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