Vol. 30 No. 3 (2020)
Papers

Mechanism of Inverse Magnetoresistance in High-\(T_{a}\) Annealed MnNi/Co/Ag(Cu)/Py Spin Valves

Anh Tuan Nguyen
International Training Institute for Materials Science (ITIMS), Hanoi University of Technology (HUT),
Bio
Van Su Luong
ITIMS, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam and Faculty of Electrical and Electronic Engineering, Phenikaa Institute for Advanced Study (PIAS), Phenikaa University
Quoc Khanh Hoang
ITIMS, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
Thi Hoai Dung Tran
ITIMS, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
Anh Tue Nguyen
IEP, Hanoi Univ. of Science and Technology, 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam

Published 22-07-2020

Keywords

  • Spin valve,
  • magnetic transport,
  • spin-dependent scattering,
  • magnetoresistance (MR),
  • inverse magnetoresistance (IMR).

How to Cite

Nguyen, A. T., Luong, V. S., Hoang, Q. K., Tran, T. H. D., & Nguyen, A. T. (2020). Mechanism of Inverse Magnetoresistance in High-\(T_{a}\) Annealed MnNi/Co/Ag(Cu)/Py Spin Valves. Communications in Physics, 30(3), 279. https://doi.org/10.15625/0868-3166/30/3/13858

Abstract

The magnetic transport properties -- magnetoresistive (MR) effects of MnNi/Co/Ag(Cu)/\break Py pinned spin valve structures (SVs) prepared by rf sputtering method and annealed at \(T_{a} = 100\)°C - 500°C for 30 minutes in high vacuum (\(\sim 10^{ - 5}\) torr) are investigated. The received results show a change in the observed MR behaviors from a normal giant magnetoresistance effect to an inverse magnetoresistance effect after annealing at high temperatures, 300°C and 400°C, for these SVs. The origin and mechanism of the IMR behavior are analyzed and discussed. These results will suggest an ability to manufacture SV devices used the IMR effect for enhancing the application capacities for SV-sensor systems.

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