Effect of Oxygen Pressure on Transport Propeties of Al-doped ZnO Films Grown by PED

Ngo Dinh Sang; Pham Hong Quang; Do Quang Ngoc

doi:10.15625/0868-3166/22/2/972

Effect of Oxygen Pressure on Transport Propeties of Al-doped ZnO Films Grown by PED

Ngo Dinh Sang, Pham Hong Quang, Do Quang Ngoc

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Authors

Ngo Dinh Sang
Pham Hong Quang
Do Quang Ngoc

DOI:

https://doi.org/10.15625/0868-3166/22/2/972

Keywords:

ZnO, PED, thin film, transport properties

Abstract

Al-doped ZnO films were grown by pulsed electron deposition (PED) at room temperature and 400 ^oC and at the oxygen pressure ranged from 3 mTorr to 20 mTorr. Transport properties were measured by van der Pauw technique. Crystallinity of the films was characterized by X-ray diffraction. It was found that the films grown at room temperature have a very high resistivity due to poor crystallinity. For the films grown at 400 ^oC, the obtained results indicate that the film grown at a lower pressure has a higher carrier mobility as well as a higher carrier concentration, resulting in a lower resistivity. This phenomenon has been discussed in term of the concentration of oxygen vacancies and the number of traps for carriers.

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Published

26-06-2012

How to Cite

[1]

N. D. Sang, P. H. Quang, and D. Q. Ngoc, “Effect of Oxygen Pressure on Transport Propeties of Al-doped ZnO Films Grown by PED”, Comm. Phys., vol. 22, no. 2, p. 155, Jun. 2012.

IEEE

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Issue

Vol. 22 No. 2 (2012)

Section

Papers

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