Effect of Oxygen Pressure on Transport Propeties of Al-doped ZnO Films Grown by PED

Ngo Dinh Sang, Pham Hong Quang, Do Quang Ngoc
Author affiliations

Authors

  • Ngo Dinh Sang
  • Pham Hong Quang
  • Do Quang Ngoc

DOI:

https://doi.org/10.15625/0868-3166/22/2/972

Keywords:

ZnO, PED, thin film, transport properties

Abstract

Al-doped ZnO films were grown by pulsed electron deposition (PED) at room temperature and 400 oC and at the oxygen pressure ranged from 3 mTorr to 20 mTorr. Transport properties were measured by van der Pauw technique. Crystallinity of the films was characterized by X-ray diffraction. It was found that the films grown at room temperature have a very high resistivity due to poor crystallinity. For the films grown at 400 o C, the obtained results indicate that the film grown at a lower pressure has a higher carrier mobility as well as a higher carrier concentration, resulting in a lower resistivity. This phenomenon has been discussed in term of the concentration of oxygen vacancies and the number of traps for carriers.

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Published

26-06-2012

How to Cite

[1]
N. D. Sang, P. H. Quang, and D. Q. Ngoc, “Effect of Oxygen Pressure on Transport Propeties of Al-doped ZnO Films Grown by PED”, Comm. Phys., vol. 22, no. 2, p. 155, Jun. 2012.

Issue

Section

Papers
Received 07-06-2012
Accepted 13-06-2012
Published 26-06-2012