Vol. 24 No. 1 (2014)

Epitaxial Growth of High Curie-Temperature Ge1-xMnx quantum dots on Si(001) by auto-assembly

Luong Thi Kim Phuong
Aix Marseille University, CNRS, CINaM-UMR 7325, F-13288 Marseille, France and Hong Duc University, 565 Quang Trung, Thanh Hoa
An Manh Nguyen
Hong Duc University, 565 Quang Trung, Thanh Hoa

Published 23-03-2014


  • Ferromagnetic quantum dots,
  • high Curie temperature,
  • Stranski-Krastanov growth,
  • spintronics

How to Cite

Phuong, L. T. K., & Nguyen, A. M. (2014). Epitaxial Growth of High Curie-Temperature Ge1-xMnx quantum dots on Si(001) by auto-assembly. Communications in Physics, 24(1), 69. https://doi.org/10.15625/0868-3166/24/1/3477


We report on successful growth of epitaxial and high Curie-temperature Ge1-xMnx quantum dots on Si (001) substrates using the auto-assembled approach. By reducing the growth temperature down to 400 °C, we show that the Mn diffusion into the Si substrate can be neglected. No indication of secondary phases or clusters was observed. Ge1-xMnx quantum dots were found to be epitaxial and perfectly coherent to the Si substrate. We also observe ferromagnetic ordering in quantum dots at a temperature higher 320 K. It is believed that single-crystalline quantum dots exhibiting a high Curie temperature are potential candidates for spin injection at temperatures higher than room temperature.


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