Epitaxial Growth of High Curie-Temperature Ge1-xMnx quantum dots on Si(001) by auto-assembly

Luong Thi Kim Phuong; An Manh Nguyen

doi:10.15625/0868-3166/24/1/3477

Author affiliations

Authors

Luong Thi Kim Phuong Aix Marseille University, CNRS, CINaM-UMR 7325, F-13288 Marseille, France and Hong Duc University, 565 Quang Trung, Thanh Hoa
An Manh Nguyen Hong Duc University, 565 Quang Trung, Thanh Hoa

DOI:

https://doi.org/10.15625/0868-3166/24/1/3477

Keywords:

Ferromagnetic quantum dots, high Curie temperature, Stranski-Krastanov growth, spintronics

Abstract

We report on successful growth of epitaxial and high Curie-temperature Ge_1-xMn_x quantum dots on Si (001) substrates using the auto-assembled approach. By reducing the growth temperature down to 400 °C, we show that the Mn diffusion into the Si substrate can be neglected. No indication of secondary phases or clusters was observed. Ge_1-xMn_x quantum dots were found to be epitaxial and perfectly coherent to the Si substrate. We also observe ferromagnetic ordering in quantum dots at a temperature higher 320 K. It is believed that single-crystalline quantum dots exhibiting a high Curie temperature are potential candidates for spin injection at temperatures higher than room temperature.

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