Epitaxial Growth of High Curie-Temperature Ge1-xMnx quantum dots on Si(001) by auto-assembly

Authors

  • Luong Thi Kim Phuong Aix Marseille University, CNRS, CINaM-UMR 7325, F-13288 Marseille, France and Hong Duc University, 565 Quang Trung, Thanh Hoa
  • An Manh Nguyen Hong Duc University, 565 Quang Trung, Thanh Hoa

DOI:

https://doi.org/10.15625/0868-3166/24/1/3477

Keywords:

Ferromagnetic quantum dots, high Curie temperature, Stranski-Krastanov growth, spintronics

Abstract

We report on successful growth of epitaxial and high Curie-temperature Ge1-xMnx quantum dots on Si (001) substrates using the auto-assembled approach. By reducing the growth temperature down to 400 °C, we show that the Mn diffusion into the Si substrate can be neglected. No indication of secondary phases or clusters was observed. Ge1-xMnx quantum dots were found to be epitaxial and perfectly coherent to the Si substrate. We also observe ferromagnetic ordering in quantum dots at a temperature higher 320 K. It is believed that single-crystalline quantum dots exhibiting a high Curie temperature are potential candidates for spin injection at temperatures higher than room temperature.

Downloads

Download data is not yet available.

References

International Technology Roadmap for Semiconductors (ITRS), 2009 Edition, Emerging Research Materials, www.itrs.net

G. Scappucci, G. Capellini, B. Johnston,W. M. Klesse, J. A.Miwa, and M. Y. Simmons, Nano Lett. 11 (2011) 22721.

Y. D. Park, A. T. Hanbicki, S. C. Erwin, C. S. Hellberg, J. M. Sullivan, J. E. Mattson, T. F. Ambrose, A. Wilson, G. Spanos, and B. J. Jonker, Science 295 (2002) 651.

N. Pinto, L. Morresi, M. Ficcadenti, R. Murri, F. D’Orazio, F. Lucari, L. Boarino, and G. Amato, Phys. Rev. B 72 (2005) 165203.

A. P. Li, J. F. Wendelken, L. C. Feldman, J. R. Thompson, and H. H. Weitering, Appl. Phys. Lett. 86 (2005) 152507.

F. Tsui, L. He, L. Ma, A. Tkachuk, Y. S. Chu, K. Nakajima, and T. Chikyow, Phys. Rev. Lett. 91 (2003)177203.

C. Bihler, C. Jaeger, T. Vallaitis, M. Gjukic, M. S. Brandt, E. Pippel, J. Woltersdorf, and U. Gosele, Appl. Phys. Lett. 88 (2006) 112506

L. Morresi, J. Ayoub, N. Pinto, M. Ficcadenti, R. Murri, A. Ronda, and I. Berbezier, Mater. Sci. Semicond. Process. 9 (2006) 836.

M. Passacantando, L. Ottaviano, F. D’Orazio, F. Lucari, M. D.DeBiase, G. Impellizzeri, and F. Priolo, Phys. Rev. B 73 (2006) 195207.

S. Ahlers, D. Bougeard, N. Sircar, G. Abstreiter, A. Trampert, M. Opel, and R. Gross, Phys. Rev. B 74 (2006) 214411.

T. Devillers, M. Jamet, A. Barski, V. Poydenot, P. Bayle-Guillemaud, E. Bellet-Amalric, S. Cherifi, and J. Cibert, Phys. Rev. B 76 (2007) 205306

D. Bougeard, N. Sircar, S. Ahlers, V. Lang, G. Abstreiter, A. Trampert, J. M. LeBeau, S. Stemmer, D. W. Saxey, and A. Cerezo, Nano Lett. 9 (2009) 3743

Y.D. Park, A. Wilson, A.T. Hanbicki, J.E. Matteson, T. Ambrose, G. Spanos, B.T. Jonker, Appl. Phys. Lett. 78 (2001) 2739.

S. Cho, S. Choi, S.C. Hong, Y. Kim, J.B. Ketterson, B.-J. Kim, Y.C. Kim, J.-H. Jung, Phys. Rev. B 66 (2002) 033303.

A.P. Li, J.F. Wendelken, J. Shen, L.C. Feldman, J.R. Thompson, H.H. Weitering, Phys. Rev. B 72 (2005) 195205.

L. Ottaviano, M. Passacantando, S. Picozzi, A. Continenza, R. Gunnella, A. Verna, G. Impellizzeri, F. Priolo, Appl. Phys. Lett. 88 (2006) 061907;

M. Passacantando, L. Ottaviano, F. D'Orazio, F. Lucari, M. De Biase, G. Impellizzeri, F. Priolo, Phys. Rev. B 73 (2006) 195207.

A. Verna, L. Ottaviano, M. Passacantando, S. Santucci, P. Picozzi, F. D'Orazio, F. Lucari, M. De Biase, R. Gunnella, M. Berti, A. Gasparotto, G. Impellizzeri, F. Priolo, Phys. Rev. B 74 (2006) 085204.

C. Zeng, S. C. Erwin, L. C. Feldman, A. P. Li, R. Jin, Y. Song, J. R. Thompson, and H. H. Weitering, Appl. Phys. Lett. 83 (2002) 5002

S. Olive-Mendez, A. Spiesser, L. A. Michez, V. Le Thanh, A. Glachant, J. Derrien, T. Devillers, A. Barski, and M. Jamet, Thin Solid Films 517 (2008) 191.

M. Gajdzik, C. Surgers, M. T. Kelemen, and H. V. Lohneysen, J. Magn. Magn. Mater. 221 (2000) 248

A. Spiesser, I. Slipukhina, M.-T. Dau, E. Arras, V. Le Thanh, L. Michez, P. Pochet, H. Saito, S. Yuasa, M. Jamet, J. Derrien, Phys. Rev. B 84 (2001) 165203.

A. Spiesser, V. Le Thanh, S. Bertaina, L.A. Michez, Appl. Phys. Lett. 99 (2011) 121904.

M.T. Dau, V. Le Thanh, T.G. Le, A. Spiesser, M. Petit, L.A. Michez, R. Daineche, Appl. Phys. Lett. 99 (2011) 151908.

M. T. Dau, V. Le Thanh, L. A. Michez, M. Petit, T. G. Le, O. Abbes, A. Spiesser, and A. Ranguis, New. J. Phys. 14 (2012) 103020.

O. Abbes, A. Portavoce, V. Le Thanh, C. Girardeaux, L. Michez, Appl. Phys. Lett. 103 (2013) 172405.

V. Le Thanh, A. Spiesser, M.T. Dau, S.F. Olive-mendez, L. A Michez, M. Petit, Advances in Natural Sciences : Nanoscience and Nanotechnology 4 (2013) 043002

D.J. Eaglesham, M. Cerullo, Phys. Rev. Lett. 64 (1990) 1943.

Y.-W. Mo, D.E. Savage, B.S. Swartzentruber, M.G. Lagally, Phys. Rev. Lett. 65 (1990) 1020.

V. Le Thanh, Surf. Sci. 492 (2001) 255

V. Le Thanh, P. Boucaud, D. Débarre, Y. Zheng, D. Bouchier, and J. M. Lourtioz, Phys. Rev. B 58 (1998) 13115

G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Science 279 (1998) 353

A. V. Baranov, A. V. Fedorov, T. S. Perova, R. A. Moore, V. Yam, D. Bouchier, V. Le Thanh, K. Berwick, Phys. Rev. B 73 (2006) 075322

U. Denker, M. Stoffel, and O. G. Schmidt, Phys. Rev. Lett. 90 (2003)196102

T.K.P. Luong, M.T. Dau, M.A. Zrir, M. Stoffel, V. Le Thanh, M. Petit, A. Ghrib, M. El Kurdi, P. Boucaud, H. Rinnert, J. Murota, J. Appl. Phys. 114 (2013) 083504.

F. Xiu, Y. Wang, J. Kim, A. Hong, J. Tang, A. P. Jacob, J. Zou, and K. L. Wang, Nat. Mater. 9 (2010) 337

J. Kassim, C. Nolph, M. Jamet, P. Reinke, and J. Floro, Appl. Phys. Lett. 101 (2012) 242407

T. G. Le, D. N. H. Nam, M. T. Dau, T. K. P. Luong, N. V. Khiem, V. Le Thanh, L. Michez, and J. Derrien, J. Phys.: Conf. Ser. 292 (2011) 012012

Downloads

Published

23-03-2014

How to Cite

Phuong, L. T. K., & Nguyen, A. M. (2014). Epitaxial Growth of High Curie-Temperature Ge1-xMnx quantum dots on Si(001) by auto-assembly. Communications in Physics, 24(1), 69. https://doi.org/10.15625/0868-3166/24/1/3477

Issue

Section

Papers