Study of Self-diffusion in  GaAs Crystal: Temperature Dependence

Vu Van Hung; Phan Thi Thanh Hong; Nguyen Thanh Hai

doi:10.15625/0868-3166/20/3/2272

Study of Self-diffusion in GaAs Crystal: Temperature Dependence

Vu Van Hung, Phan Thi Thanh Hong, Nguyen Thanh Hai

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Authors

Vu Van Hung Hanoi National University of Education
Phan Thi Thanh Hong Hanoi Pedagogic University No.~2
Nguyen Thanh Hai Hanoi University of Technology

DOI:

https://doi.org/10.15625/0868-3166/20/3/2272

Abstract

The self-diffusion of Ga and As atoms in GaAs crystal with the zince-blende structure (ZnS) is investigated by using the statistical moment method (SMM). The activation energy $(Q)$, diffusion coefficient $(D)$, and pre-exponential factor ($D_0$) are expressed by analytical closed expressions. The present analytical formulas are including the anharmonic effects of the lattice vibrations. The obtained results are applied to GaAs crystal and the SMM calculations of $Q, D$ and $D_0$ are in agreement with the experimental data.

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Published

15-08-2012

How to Cite

[1]

V. V. Hung, P. T. T. Hong, and N. T. Hai, “Study of Self-diffusion in GaAs Crystal: Temperature Dependence”, Comm. Phys., vol. 20, no. 3, p. 227, Aug. 2012.

IEEE

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Issue

Vol. 20 No. 3 (2010)

Section

Papers

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