Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes

Tran Thien Duc, Le Thi Hai Thanh
Author affiliations

Authors

  • Tran Thien Duc Hanoi University of Science and Technology, 1 Dai Co Viet, Hai Ba Trung district, 10000 Hanoi, Vietnam
  • Le Thi Hai Thanh Hanoi University of Science and Technology, 1 Dai Co Viet, Hai Ba Trung district, 10000 Hanoi, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/19462

Abstract

Bulk GaN was irradiated by 2 MeV electron beam at a fluence of 5 × 1016 cm2 and studied by deep level transient spectroscopy (DLTS). After irradiation, a broad peak, including at least two traps, was detected. The trap D1 (EC – 0.16 eV) observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after ~ 10 hours. The annealing process at 550K also forms a new trap D2 (EC – 0.25 eV). From the isothermal study the activation energy of the trap D2 in the annihilation process is obtained and has a value of 1.3 ± 0.3 eV. The pre-factor of the annihilation process suggested this process to be related to the free-carrier capture by multi-phonon emission. From the thermal behavior, the trap D2 was suggested to be related to gallium vacancy.

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...

References

M. Östling, R. Ghandi, and C.M. Zetterling, in Int. Symp. Power Semicond. Devices ICs (2011), pp. 10–15.

M.G. Spencer and W. Schaff, ECS Trans. 50, 145 (2012).

S. Strite and H. Morkoç, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 10, 1237 (1992).

S.J. Pearton, J.C. Zolper, R.J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).

S. Nakamura, M. Senoii, N. Iwasa, S.I. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 34, L1332 (1995).

I. Akasaki, Proc. IEEE 101, 2200 (2013).

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T.M.- Sushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).

L. Polenta, Z.-Q. Fang, and D.C. Look, Appl. Phys. Lett. 76, 2086 (2000).

S.A. Goodman, F.D. Auret, M.J. Legodi, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 78, 3815 (2001).

H. Nykänen, S. Suihkonen, L. Kilanski, M. Sopanen, and F. Tuomisto, Appl. Phys. Lett. 100, 122105 (2012).

Z.-Q. Fang, J.W. Hemsky, D.C. Look, and M.P. Mack, Appl. Phys. Lett. 72, 448 (1998).

T.T. Duc, G. Pozina, N.T. Son, E. Janzén, T. Ohshima, and C. Hemmingsson, Appl. Phys. Lett. 105, 102103 (2014).

D.V. Lang, J. Appl. Phys. 45, 3023 (1974).

D.U. Lee, E.K. Kim, B.C. Lee, and D.K. Oh, Thin Solid Films 516, 3482 (2008).

A.Y. Polyakov, I.-H. Lee, N.B. Smirnov, A. V. Govorkov, E.A. Kozhukhova, N.G. Kolin, A. V. Korulin, V.M. Boiko, and S.J. Pearton, J. Appl. Phys. 109, 123703 (2011).

S.J. Pearton, R. Deist, F. Ren, L. Liu, A.Y. Polyakov, and J. Kim, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 31, 050801 (2013).

A. Castaldini, A. Cavallini, and L. Polenta, J. Phys. Condens. Matter 12, 10161 (2000).

D.C. Look, G.C. Farlow, P.J. Drevinsky, D.F. Bliss, and J.R. Sizelove, Appl. Phys. Lett. 83, 3525 (2003).

A. Chantre, Appl. Phys. A Mater. Sci. Process. 9, 3 (1989).

P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake, J. Appl. Phys. 76, 304 (1994).

T.T. Duc, G. Pozina, E. Janzén, and C. Hemmingsson, J. Appl. Phys. 114, 153702 (2013).

C.B. Soh, S.J. Chua, H.F. Lim, D.Z. Chi, S. Tripathy, and W. Liu, J. Appl. Phys. 96, 1341 (2004).

Z.-Q. Fang, D.C. Look, and L. Polenta, J. Phys. Condens. Matter 14, 13061 (2002).

F. Tuomisto, V. Ranki, D. Look, and G. Farlow, Phys. Rev. B 76, 165207 (2007).

K. Saarinen, T. Suski, I. Grzegory, and D. Look, Phys. Rev. B 64, 1 (2001).

Downloads

Published

21-02-2024

How to Cite

[1]
D. Tran Thien and T. H. T. Le, “Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes”, Comm. Phys., vol. 34, no. 1, p. 57, Feb. 2024.

Issue

Section

Papers
Received 21-11-2023
Accepted 13-12-2023
Published 21-02-2024