Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes

Tran Thien Duc, Le Thi Hai Thanh
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Authors

  • Tran Thien Duc Hanoi University of Science and Technology, 1 Dai Co Viet, Hai Ba Trung district, 10000 Hanoi, Vietnam
  • Le Thi Hai Thanh Hanoi University of Science and Technology, 1 Dai Co Viet, Hai Ba Trung district, 10000 Hanoi, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/19462

Abstract

Bulk GaN was irradiated by 2 MeV electron beam at a fluence of 5 × 1016 cm2 and studied by deep level transient spectroscopy (DLTS). After irradiation, a broad peak, including at least two traps, was detected. The trap D1 (EC – 0.16 eV) observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after ~ 10 hours. The annealing process at 550K also forms a new trap D2 (EC – 0.25 eV). From the isothermal study the activation energy of the trap D2 in the annihilation process is obtained and has a value of 1.3 ± 0.3 eV. The pre-factor of the annihilation process suggested this process to be related to the free-carrier capture by multi-phonon emission. From the thermal behavior, the trap D2 was suggested to be related to gallium vacancy.

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Published

21-02-2024

How to Cite

[1]
D. Tran Thien and T. H. T. Le, “Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes”, Comm. Phys., vol. 34, no. 1, p. 57, Feb. 2024.

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Vol. 34 No. 1 (2024)

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Papers

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Received 21-11-2023
Accepted 13-12-2023
Published 21-02-2024