Asymmetric tunneling of holes through a semiconductor junction in an arbitrary magnetization configuration

Loan T. Nguyen, Haidang Phan, Hoai T. L. Nguyen
Author affiliations

Authors

  • Loan T. Nguyen \(^1\)Hong Duc University, 565 Quang Trung road, Dong Ve, Thanh Hoa, Vietnam
    \(^2\)Graduate University of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
  • Haidang Phan \(^1\)Graduate University of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
    \(^2\) Faculty of Civil Engineering, VNU University of Engineering and Technology, Hanoi, Vietnam
  • Hoai T. L. Nguyen \(^1\)Graduate University of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
    \(^2\)Institute of Physics, Vietnam Academy of Science and Technology,

DOI:

https://doi.org/10.15625/0868-3166/18218

Keywords:

spin-orbit interaction, III-V semiconductor, magnetic tunnel junction, multi-band transport, transfer matrix, k.p method

Abstract

In this paper, we investigate the asymmetry of holes tunneling through GaMnAs/GaAs/GaMnAs heterostructures in the cases general, where the magnetization of the two electrodes are not colinear and their magnitude are not equal. The six-bands $\textbf{k.p}$ Hamiltonian is employed to describe the holes in the GaAs and GaMnAs layers, taking into account both spin-orbit and exchange interactions. The multi-band transfer-matrix formalism is applied for numerically solving the Schrodinger equation to derive the hole wave transmission. We then calculate the transmission asymmetry and discuss its dependence on the right electrode magnetization magnitude, as well as the angles determining relatively the orientation of two magnetization vectors. The study may provide the insights into dynamic of Anomalous Tunneling Hall current during magnetization switching process which are important in spintronics technology for device design and measurement.

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Published

10-08-2023

How to Cite

[1]
L. Nguyen, H. Phan, and H. T. L. Nguyen, “Asymmetric tunneling of holes through a semiconductor junction in an arbitrary magnetization configuration”, Comm. Phys., vol. 33, no. 3, p. 263, Aug. 2023.

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Funding data

Received 04-04-2023
Accepted 26-05-2023
Published 10-08-2023