Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage

Loan T. Nguyen, H.-J. Drouhin, Hoai T. L. Nguyen
Author affiliations

Authors

  • Loan T. Nguyen
  • H.-J. Drouhin
  • Hoai T. L. Nguyen Institute of Physics

DOI:

https://doi.org/10.15625/0868-3166/17046

Keywords:

spin-orbit interaction, III-V semiconductor, magnetic tunnel junction, spin-current, multi-band transport, transfer matrix, k.p method

Abstract

This paper investigates spin-current transport in a GaMnAs/GaAs/GaMnAs magnetic semiconductor tunnel junctions under applied bias voltages. The 30-band k.p approach is used to describe the materials within the heterostructure, incorporating both spin-orbit and exchange interactions. We use the transfer-matrix formalism to derive numerical solutions for the wave functions. At specific bias values, we calculate the polarization of the spin-current component along the z direction of the structure. We show oscillations of the two spin-current components perpendicular to the magnetization with equal polarization amplitude and characteristic period. The polarization amplitude varies around 10%, reflecting the typical polarization in such type of material. The oscillation period - which relates to the Larmor frequency for spin precession - increases with the bias voltage values.

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Published

06-09-2022

How to Cite

[1]
T. L. Nguyen, H.-J. Drouhin, and nguyen hoai, “Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage”, Comm. Phys., vol. 32, no. 4, p. 413, Sep. 2022.

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Received 15-06-2022
Accepted 08-07-2022
Published 06-09-2022