Anisotropic Magnetoresistance Effect of Nickel Nanowires

Do Chung Pham; Van Thanh Ngo; Jean-Eric Wegrowe

doi:10.15625/0868-3166/15674

Anisotropic Magnetoresistance Effect of Nickel Nanowires

Do Chung Pham, Van Thanh Ngo, Jean-Eric Wegrowe

Author affiliations

Authors

Do Chung Pham Hanoi National University of Education https://orcid.org/0000-0003-2239-7005
Van Thanh Ngo
Jean-Eric Wegrowe

DOI:

https://doi.org/10.15625/0868-3166/15674

Keywords:

AMR, single domain, magnetic nanowire

Abstract

In this work, we study the magnetic properties of nickel nanowires by measuring their anisotropic magnetoresistance at room temperature. The single nickel nanowire is grown by electrodeposition in a polymer membrane (Polycarbonate). We measure the anisotropic magnetoresistance effect of nickel nanowires for the various values of the magnitudes and orientations of an external magnetic field. The results clearly show the existence the anisotropic magnetoresistance effect in the nickel nanowires. Besides, the experimental data are best fit to the analytical calculations using the Stoner-Wohlfarth model for the magnetization of the wires.

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Published

27-01-2021

How to Cite

[1]

D. C. Pham, V. T. Ngo, and J.-E. Wegrowe, “Anisotropic Magnetoresistance Effect of Nickel Nanowires”, Comm. Phys., vol. 31, no. 2, p. 227, Jan. 2021.

IEEE

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Issue

Vol. 31 No. 2 (2021)

Section

Papers

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