Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm

Thanh-Phuong Nguyen
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Authors

  • Thanh-Phuong Nguyen School of Engineering Physics, Hanoi University of Science and Technology

DOI:

https://doi.org/10.15625/0868-3166/29/1/13221

Keywords:

high power semiconductor lasers, DFB-MOPA, beam quality

Abstract

Detail characterization of the such laser diode is important for the applications. Electro-Optical and spectral characteristics of the high power 1064 nm DFB-MOPA lasers are investigated at room temperature as function of injection current. Beam quality is characterized by waist diameter and far-field divergence angle versus average optical output power. Beam propagation ratio M2 is defined at difference intensity levels from lateral beam profile giving more detail laser behaviors at high power.

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References

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Published

05-02-2019

How to Cite

[1]
T.-P. Nguyen, “Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm”, Comm. Phys., vol. 29, no. 1, p. 47, Feb. 2019.

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Section

Papers
Received 23-10-2018
Accepted 29-12-2018
Published 05-02-2019

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