Characterization of High-power DFB-MOPA Diode Lasers Emitting at 1064 nm
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https://doi.org/10.15625/0868-3166/29/1/13221Keywords:
high power semiconductor lasers, DFB-MOPA, beam qualityAbstract
Detail characterization of the such laser diode is important for the applications. Electro-Optical and spectral characteristics of the high power 1064 nm DFB-MOPA lasers are investigated at room temperature as function of injection current. Beam quality is characterized by waist diameter and far-field divergence angle versus average optical output power. Beam propagation ratio M2 is defined at difference intensity levels from lateral beam profile giving more detail laser behaviors at high power.Downloads
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Accepted 29-12-2018
Published 05-02-2019
