A Compact Device Model for Nanoparticle-organic Memory Transistor’s Characterization

Huy Van Mai, Olivier Bichler, Christian Gamrat, Yannick Viero, Fabien Alibart, Dominique Vuillaume
Author affiliations

Authors

  • Huy Van Mai Le Quy Don Technical University
  • Olivier Bichler CEA LIST, 91191 Gif--sur-Yvette, France
  • Christian Gamrat CEA LIST, 91191 Gif--sur-Yvette, France
  • Yannick Viero Institute for Electronics Microelectronics and Nanotechnology (IEMN), CNRS, Univ.of Lille, CS60069, 59652 Villeneuve d’ Ascq, France
  • Fabien Alibart Institute for Electronics Microelectronics and Nanotechnology (IEMN), CNRS, Univ.of Lille, CS60069, 59652 Villeneuve d’ Ascq, France
  • Dominique Vuillaume Institute for Electronics Microelectronics and Nanotechnology (IEMN), CNRS, Univ.of Lille, CS60069, 59652 Villeneuve d’ Ascq, France

DOI:

https://doi.org/10.15625/0868-3166/28/3/12359

Keywords:

dynamics, hybrid integrated circuit, modeling, nanotechnology, neural networks, synapse-like nanodevices, EKV model

Abstract

Neuromorphic electronic devices have recently been a candidate for new computing architecture associated with innovative nanotechnologies. A report of the characterization of Nanoparticle organic memory transistor (NOMFET) introduced a similar behavior to a biological spiking synapse in neural networks. In this paper, a refinement model based on the extracted parameters including a hybrid NOMFET/CMOS neuromorphic computing circuit and architecture of synapse to neuron interface by characterizing transistor -- memory and the temporal dynamic function is presented. A compact EKV model refinement serves as a link between nanotechnology process and circuit design for novel CMOS devices.

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...

References

F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, and D. Vuillaume, Adv. Funct. Mater, 22 (2012) 609–616. DOI: https://doi.org/10.1002/adfm.201101935

C. Novembre, D. Guérin, K. Lmimouni, C. Gamrat, and D. Vuillaume, Appl. Phys. Lett., 92 (2008), 103-314. DOI: https://doi.org/10.1063/1.2896602

F. Alibart, S. Pleutin, D. Guerin, C. Novembre, S. Lenfant, K. Lmimouni, C. Garamrat, and D. Vuillaume, Adv. Funct. Mater, 20, (2010) 330-337. DOI: https://doi.org/10.1002/adfm.200901335

O. Bichler, W. Zhao, F. Alibart, S. Pleutin, D. Vuillaume, and C. Gamrat, IEE Trans. Electron Devices, 57 (2010) 3115-3122. DOI: https://doi.org/10.1109/TED.2010.2065951

T. Serrano-Gotarredona, B. Linares-Barranco, G. Agnus, V. Derycke, J-P. Bourgoin, F. Alibart, D. Vuillaume, J. Sohn, J. Bendall, M. E. Welland, and C. Gamrat, “Fast and compact simulation models for a variety of fet nano devices by the CMOS EKV equations”, 9th IEEE conference on Nanotechnology (2009).

G. Vicente-Sánchez, et al., « A weak-to-strong inversion mismatch model for analog circuit design” Int. J. Analog Int. Circ., (2008). DOI: https://doi.org/10.1007/s10470-008-9256-8

Kyoung-Cheol Kwon, Jong-Sun Lee, Chul Geun Kim and Jea-Gun Park, Appl. Phys. Express, 6 (2013) 067001. DOI: https://doi.org/10.7567/APEX.6.067001

Enz, C. C., Krummenacher, F., & Vittoz, E. A, Analog Integrated Circuits and Signal Processing, 8 (1995), 83–114. DOI: https://doi.org/10.1007/BF01239381

Tsodyks, M., K. Pawelzik, and H. Markram, Neural Computation, 10 (1998) 821–835. DOI: https://doi.org/10.1162/089976698300017502

Abbott, L., J. Varela, K. Sen, and S. Nelson, Science 275 (1997) 220–224. DOI: https://doi.org/10.1126/science.275.5297.221

Oguey, H. J., & Cserveny, S. “MOS modelling at low current density”, Summer course on process and device modelling. Belgium: ESAT Leuven-Heverlee (1983).

Enz, Christian, et al. "The foundations of the EKV MOS transistor charge-based model." Threshold 1 (2002)

Enz, Christian C. "A short story of the EKV MOS transistor model." Solid-State Circuits Society Newsletter, IEEE 13.3 (2008) 24-30. DOI: https://doi.org/10.1109/N-SSC.2008.4785778

C. H. Chenming, “Modern semiconductor devices for integrated circuits.” Prentice Hall (2009).

Downloads

Published

14-11-2018

How to Cite

[1]
H. V. Mai, O. Bichler, C. Gamrat, Y. Viero, F. Alibart, and D. Vuillaume, “A Compact Device Model for Nanoparticle-organic Memory Transistor’s Characterization”, Comm. Phys., vol. 28, no. 3, p. 191, Nov. 2018.

Issue

Vol. 28 No. 3 (2018)

Section

Papers

License

Authors who publish with CIP agree with the following terms:
  1. The manuscript is not under consideration for publication elsewhere. When a manuscript is accepted for publication, the author agrees to automatic transfer of the copyright to the editorial office.
  2. The manuscript should not be published elsewhere in any language without the consent of the copyright holders. Authors have the right to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal’s published version of their work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
  3. Authors are encouraged to post their work online (e.g., in institutional repositories or on their websites) prior to or during the submission process, as it can lead to productive exchanges or/and greater number of citation to the to-be-published work (See The Effect of Open Access).
Crossref
Scopus
Google Scholar
Europe PMC
Received 23-04-2018
Accepted 04-07-2018
Published 14-11-2018