Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects

Van Tuan Truong, Quoc Khanh Nguyen, Van Tai Vo, Khan Linh Dang


We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.


Magnetoresistance; Exchange-correlation effects; Metal–insulator transition

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