Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects

Van Tuan Truong, Quoc Khanh Nguyen, Van Tai Vo, Khan Linh Dang

Abstract


We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.

Keywords


Magnetoresistance; Exchange-correlation effects; Metal–insulator transition

Full Text:

PDF


DOI: https://doi.org/10.15625/0868-3166/30/2/14446 Display counter: Abstract : 85 views. PDF : 37 views.

Refbacks

  • There are currently no refbacks.




Editorial Office:

Communications in Physics

1st Floor, A16 Building, 18B Hoang Quoc Viet Street, Cau Giay District, Hanoi, Vietnam

Tel: (+84) 024 3791 7102 

Email: cip@vjs.ac.vn

Copyright by