Relaxation Rate and Mobility of a Two-dimensional Electron Gas in MgZnO/ZnO Heterostructures Including Exchange and Correlation Effects

Vo Van Tai, Nguyen Quoc Khanh


We investigate the relaxation rate and mobility of a two-dimensional electron gas (2DEG) confined in MgZnO/ZnO heterostructures (HSs) for temperatures , taking into account exchange and correlation effects. We use the variational-subband-wave-function model for carrier confinement and assume that the electrons are confined to the lowest subband and scattered by acoustic phonons via deformation potential (DP) and piezoelectric (PE) fields, polar LO phonons, interface roughness (IRS), interface charges (IFCs) and the background impurities (BIs). The calculations are based on the linearized Boltzmann equation (BE) and the relaxation time approximation, assuming the scattering by acoustic phonons to be quasi-elastic. We consider three physically distinct temperature ranges with respect to phonon scattering: the Bloch-Grüneisen (BG), equipartition (EP), and inelastic regimes. In the inelastic regime at high temperatures, where the scattering from polar LO phonons becomes important, we solve directly the linearized BE by an iterative method and compare the obtained results with those of the low-temperature and high-energy relaxation-time approximation. Our calculated low-temperature mobility is in good agreement with the recent experiment.


ZnO, Heterostructure, Scattering mechanism, Correlation effect

Full Text:



A. Ohtomo et al., Appl. Phys. Lett, 72 (1998) 2466.

T. Aoki et al., Appl. Phys. Lett, 76 (2000) 3257.

U. K. Mishra et al., Proc. IEEE, 90 (2002), 1022.

K. Koike, Jpn. J. Appl. Phys. 43 (2004) L1372.

S. Datta, B. Das, Appl. Phys. Lett. 56 (1990) 665.

K. Tsubaki et al., Appl. Phys. Lett. 80 (2002) 3126.

K. Ellmer, J. Phys. D: Appl. Phys. 34 (2001) 3097.

D. C. Look, Semicond. Sci. Technol. 20 (2005) S55.

A. Gold, Appl. Phys. Lett. 96 (2010) 242111.

A. Gold, J. Appl. Phys. 110 (2011) 043702.

M. Nakano et al., Adv. Mater. 22 (2010) 876.

M. A. Tsukazaki et al., Nature Mater. 9 (2010) 889.

M. Tsaousidou, Phys. Status Solidi RRL 7 (2013) 544.

T. Kawamura, S. Das Sarma, Phys. Rev. B 45 (1992) 3612.

K. Rizwana Begum et al., 2013 AIP Conference Proceedings, Volume 1536, Issue 1, p.447.

J. Falson et al., Appl. Phys. Express 4 (2011) 091101.

Li Q. et al., Appl. Phys. Express 6, 121102 (2013).

Vo Van Tai, Nguyen Quoc Khanh, Physica E 67 (2015) 84.

A. Gold, Z. Phys. B 103 (1997) 491.

A. Gold, Phys. Rev. B 35 (1987) 723.

Chihiro Hamaguchi, Basic Semiconductor Physics, Springer, Berlin Heidelberg, 2001.

A. Gold, Semicond. Sci. Technol. 26 (2011) 045017.

A. Gold, Appl. Phys. Lett. 54 (1989) 2100.

S. J. MacLeod et al., Phys. Rev. B 80 (2009) 035310.

M. D. Kamatagi, et a., Phys. Rev. B 71 (2005) 125334.


  • There are currently no refbacks.

Published byVietnam Academy of Science and Technology