1.Chien ND, Anh DTK, Shih C-H. Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors. Vietnam J. Sci. Technol. [Internet]. 2017 Jun. 16 [cited 2026 Jan. 10];55(3):316-23. Available from: https://vjs.ac.vn/jst/article/view/8362