CHIEN, Nguyen Dang; ANH, Dao Thi Kim; SHIH, Chun-Hsing. Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors. <b>Vietnam Journal of Science and Technology</b>, Hanoi, VN, v. 55, n. 3, p. 316–323, 2017. DOI: 10.15625/2525-2518/55/3/8362. Disponível em: https://vjs.ac.vn/jst/article/view/8362. Acesso em: 10 jan. 2026.