PHAM, Anh Tuan Thanh et al. Effect of 0.5 at.% indium on thermoelectric properties of gallium doped-zinc oxide bulk. <b>Vietnam Journal of Science and Technology</b>, Hanoi, VN, v. 58, n. 2, p. 175–180, 2020. DOI: 10.15625/2525-2518/58/2/13966. Disponível em: https://vjs.ac.vn/jst/article/view/13966. Acesso em: 10 jan. 2026.