VINH, L. T.; CHIEN, N. D. Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors. Vietnam Journal of Science and Technology, [S. l.], v. 53, n. 1, p. 85–95, 2015. DOI: 10.15625/0866-708X/53/1/3805. Disponível em: https://vjs.ac.vn/index.php/jst/article/view/3805. Acesso em: 26 apr. 2024.