• Thuy Thi Pham Sai Gon University




porous GaP, temperature-dependent photoluminescence


This paper reports on the temperature-dependent photoluminescence of porous GaP under the 532-nm excitation. Porous GaP formed by electrochemical anodization of (111)-oriented bulk material exhibits green emission at 550 nm (2.25 eV) and red emission at 770 nm (1.65 eV) at room temperature. In the temperature range from 25 K to 275 K intensity from the green emission gradually decreases when the temperature increases. Additionally, peak position of the green luminescence band shifts to lower energy with increasing temperature and the same the GaP band gap narrowing with temperature. This means a contribution of lattice vibrations.


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Uhlir A. – Electrolytic shaping of germanium and silicon, Bell System Technical Journal, 35 (1956) 333-347.

Loni A., Canham L. T., Berger M. G., Arens-Fischer R., Munder H., Arrand H. F., and Benson T. M. – Porous silicon multilayer optical waveguieds, Thin Solid Films. 276 (1996) 143.

Remache L., Nychyporuk T., Guermit N., Fourmond E., Mahdjoub A., and Lemiti M. – Optical properties of porous Si/PECVD SiNx:H reflector on single crystalline Si for solar cells, Materials Science-Poland, 34 (1) (2016) 94-100.

Barillaro G., Diligenti A., Strambini L. M., Comini E., and Faglia G. – NO2 adsorption effects on p + - n silicon junctions surrounded by a porous layer, Sens Actuator B, 134 (2008) 922-927.

Barillaro G., Lazzerini G. M., and Strambini L. M., – Modeling of porous silicon junction field effect transition gas sensors: insight into NO2 interaction, Applied Physic Letter, 96 (2010) 162105.

Barillaro G.,Bruschi P., Lazzerini G. M., and Strambini L. M., – Validation of the compatibility between a porous silicon-based gas sensor technology and standard microelectronic process, Sens J IEEE, 10 (4) (2010) 893-899.

Drott J., Lindstrom K., Rosengren L., and Laurell T., - Porous silicon as the carrier matrix in micro structured enzyme reactor yielding enzyme activities, J. Micromech. Microeng. 7 (1997) 14-23.

Campbell L. H., and Fauchet P. M.,- The effect of microcrystal size and shape on the one phonon Raman spcetra of crystalline semiconductors, Solid State Commum, 58 (10) (1986) 739-741.

Sarua A., Irmer G., Monecke J., Tiginyanu I. M., Schwab C., Grob J. J., and Hartnagel H. L., Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing, Journal of Applied Physic, 88 (12) (2000) 7006-7012.

Anedda A., Serpi A., Karavanskii V. A., Tiginyanu I. M., and Ichizli V. M.,.- Time resolved blue and ultraviolet photoluminescence in porous GaP, Appl. Phys.Lett. 67 (22) (1995) 3316-3318.

Belogorokhov A. I., Karavanskii V. A., Obraztsov A. N., and Timoshenko V. Y.,- Intense photoluminescence in porous gallium phosphide, JETP Lett., 60 (1994) 274-279.

Liem N. Q., Quang V. X., Thanh D. X., Lee J. I., and Kim D.,- Temperature dependence of biexciton luminescence in cubic ZnS single crystals, Solid State Communications., 117 (4) (2001) 255-259.

Thuy P. T., Chi T. T. K., and Liem N. Q., - Temperature-dependent photoluminescence study of InP/ZnS quantum dots, Adv. Nat. Sci.: Nanosci. Nanotechnol., 2 (2011) 025001.

Tomioka K., and Adachi S., - Structural and photoluminescence properties of porous GaP formed by electrochemical etching,. J. App. Phys. 98 (2005) 073511.

Stevens-Kalceff M. A., Tiginyanu I. M., Langa S., Foll H. and Hartnagel H. L., - Correlation between morphology and cathodeluminescence in porous GaP, J. App. Phys. 89 (2001) 2560.

Wang S., Ma F., Jiang H., Shao Y., Wu Y., and Hao X., - Band gap- tunable porous Borocarbonitride nanosheets for high energy- density supercapacitors, ACS Appl Mater Interfaces, 10 (23) (2018) 19588-19597.

Masalov S. A., Atrashchenko A. V., Ulin V. P., Popov E. O., Kolosko A. G., and Filippov S. V., - A study of electrical properties of the porous GaP (111) surface, Technical Physics Letters, 42 (11) (2016) 1118-1121.

Vambol S., Vambol V., Suchikova Y., Bogdanov I., and Kondratenko O.,- Investigation of the porous GaP layers, chemical composition and the quality of the tests carried out, Journal of Achievements in Materials and Manufacturing Engineering, 86 (2) (2018) 49-60.




How to Cite

Pham, T. T. (2019). TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF POROUS GAP. Vietnam Journal of Science and Technology, 57(3A), 41. https://doi.org/10.15625/2525-2518/57/3A/14057