THERMOCHEMICAL PARAMETERS OF SOME SMALL PURE AND DOPED SILICON CLUSTERS

Authors

  • Nguyen Minh Tam

DOI:

https://doi.org/10.15625/2525-2518/55/6A/12362

Keywords:

Silicon Clusters, Doped silicon clusters, Thermochemical parameters, Total atomization energies, Heats of formation, Ionization energies, electron affinities.

Abstract

Quantum chemical computations of thermochemical parameters of several series of small pure and doped silicon clusters are reviewed. We analyzed the performance of the coupled-cluster theory with energies extrapolated up to complet basis set, CCSD(T)/CBS and the composite G4 method in determining the total atomization energies (TAE), standard heats of formation (∆fH0), electron affinities (EA) and ionization energies (IE) and other thermochemical parameters with respect to available experimental data. The latter were determined with large error margins.

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Published

2018-04-23

How to Cite

Tam, N. M. (2018). THERMOCHEMICAL PARAMETERS OF SOME SMALL PURE AND DOPED SILICON CLUSTERS. Vietnam Journal of Science and Technology, 55(6A), 18. https://doi.org/10.15625/2525-2518/55/6A/12362