MINH, N. V. Electron Mobility in an Unintentionally Doped GaN/AlGaN Surface Quantum Well. Communications in Physics, [S. l.], v. 21, n. 4, p. 309, 2012. DOI: 10.15625/0868-3166/21/4/432. Disponível em: https://vjs.ac.vn/index.php/cip/article/view/432. Acesso em: 25 apr. 2024.