PHUONG, L. T. K.; AN, N. M. Germanium Band Gap Engineering Induced by Tensile Strain for Si-Based Optoelectronic Applications. Communications in Physics, [S. l.], v. 23, n. 4, p. 367, 2014. DOI: 10.15625/0868-3166/23/4/3207. Disponível em: https://vjs.ac.vn/index.php/cip/article/view/3207. Acesso em: 28 oct. 2021.