HIEU, H. K.; HUNG, V. V.; HUNG, N. V. Investigation of the EXAFS Cumulants of Silicon and Germanium Semiconductors by Statistical Moment Method: Pressure Dependence. Communications in Physics, [S. l.], v. 21, n. 3, p. 245, 2011. DOI: 10.15625/0868-3166/21/3/174. Disponível em: https://vjs.ac.vn/index.php/cip/article/view/174. Acesso em: 3 aug. 2021.