TRAN, V. Q. Optimal Carrier Concentration for High Thermoelectric Performance of Lead Substituted Bismuth Telluride in p-Type Doping. Communications in Physics, [S. l.], v. 28, n. 2, p. 169, 2018. DOI: 10.15625/0868-3166/28/2/11800. Disponível em: https://vjs.ac.vn/index.php/cip/article/view/11800. Acesso em: 26 apr. 2024.