HANH, Tran Thi Thu. Adsorption capacity of a hydrogen atom on the 2D silicon carbide surface. <b>Communications in Physics</b>, <i>[S. l.]</i>, v. 33, n. 3, p. 321, 2023. DOI: 10.15625/0868-3166/18091. Disponível em: https://vjs.ac.vn/cip/article/view/18091. Acesso em: 2 jan. 2026.