TY - JOUR AU - Nguyen, Thi Loan AU - Drouhin, Henri-Jean AU - hoai, nguyen PY - 2022/09/06 Y2 - 2024/03/29 TI - Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage JF - Communications in Physics JA - Comm. Phys. VL - 32 IS - 4 SE - Papers DO - 10.15625/0868-3166/17046 UR - https://vjs.ac.vn/index.php/cip/article/view/17046 SP - 413 AB - <p>This paper investigates spin-current transport in a GaMnAs/GaAs/GaMnAs magnetic semiconductor tunnel junctions under applied bias voltages. The 30-band <strong>k.p</strong> approach is used to describe the materials within the heterostructure, incorporating both spin-orbit and exchange interactions. We use the transfer-matrix formalism to derive numerical solutions for the wave functions. At specific bias values, we calculate the polarization of the spin-current component along the z direction of the structure. We show oscillations of the two spin-current components perpendicular to the magnetization with equal polarization amplitude and characteristic period. The polarization amplitude varies around 10%, reflecting the typical polarization in such type of material. The oscillation period - which relates to the Larmor frequency for spin precession - increases with the bias voltage values.</p> ER -