@article{Hai_Hong_Tung_Quang_2012, title={The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method}, volume={20}, url={https://vjs.ac.vn/index.php/cip/article/view/2528}, DOI={10.15625/0868-3166/20/4/2528}, abstractNote={<p>We employ the theory of band-bending effects to explain the channel-width dependence of the mobility of a two-dimentional hole gas (2DHG) in narrow square Si/Si\(_{1-x}\)Ge\(_x\)/Si quantum well at high Ge content. The numerical calculation of scattering mechanisms is shown in comparison with the ones from the previous computations. Our method enables a better quantitative description of recently measured data about the dependence of the 8 K mobility of holes in a Si/Si\(_{0.2}\)Ge\(_{0.8}\)/Si quantum well on the channel width varying from 25 - 70Å</p>}, number={4}, journal={Communications in Physics}, author={Hai, Tran Thi and Hong, Nguyen Trung and Tung, Nguyen Huyen and Quang, Doan Nhat}, year={2012}, month={Nov.}, pages={319} }