Characterization of ZnO:Al deposited by co-sputtering for transparent conductive electrodes

Nguyen Tran Thuat, Bui Bao Thoa, Than Thi Cuc, Nguyen Minh Hieu, Hoang Ngoc Lam Huong, Bui Van Diep, Hoang Chi Hieu
Author affiliations

Authors

  • Nguyen Tran Thuat Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Bui Bao Thoa Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Than Thi Cuc Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Nguyen Minh Hieu Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Hoang Ngoc Lam Huong Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Bui Van Diep Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Hoang Chi Hieu Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/25/4/7478

Keywords:

AZO thin film, co-sputtering method, resistivity, transmittance

Abstract

Aluminum doped zinc oxide was prepared by magnetron sputtering methods at room temperature using a ZnO ceramic target doped 2%wt by Al2O3. The optical transmittance of the films is higher than 80% in the visible range. A direct bandgap type was reached by controlling deposition conditions; the bandgap value was in the range between 3.2 eV and 4.2 eV. Good electrical and optical properties were obtained for the films deposited by an appropriate co-sputtering of ZnO and Al targets. These films with a resistivity, about 1.3´10-2W.cm, and a transmittance, higher than 80%, can be applicable for transparent conducting electrodes.

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...

References

Y. S. Jung, H.W. Choi and K. H. Kim, J. Korean Phys. Soc. 55(2009) 1945 DOI: https://doi.org/10.3938/jkps.55.1945

J. Song,Y. He,J. Chen, D. Zhu, Z. Pan, Y. Zhang and J. Wang, Journal of Electronic Materials, 41 (2011) 431 DOI: https://doi.org/10.1007/s11664-011-1783-x

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nature Materials4 (2005) 42 DOI: https://doi.org/10.1038/nmat1284

Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev and D. M. Bagnall, Appl. Phys. Lett. 83 (2003) 4719 DOI: https://doi.org/10.1063/1.1632537

Y. Liu, Y. Li, and H. Zeng, Journal of Nanomaterials 2013 (2013) 196521 DOI: https://doi.org/10.1155/2013/196521

A. Illiberi, P.J.P.M. Simons, B. Kniknie, J. van Deelen, M. Theelen, M. Zeman, M. Tijssen, W. Zijlmans, H.L.A.H. Steijvers, D. Habets, A.C. Janssen and E.H.A. Beckers, Journal of Crystal Growth 347 (2012) 56 DOI: https://doi.org/10.1016/j.jcrysgro.2012.03.007

P. Nunes , A. Malik, B. Fernandes, E. Fortunato, P. Vilarinho and R. Martins, Vacuum 52 (1999) 45 DOI: https://doi.org/10.1016/S0042-207X(98)00321-2

M. Hiramatsu, K. Imaeda, N. Horio and M. Nawata, J. Vac. Sci. Technol. A 16 (1998) 669 DOI: https://doi.org/10.1116/1.581085

A. A. Alnajjar, Advances in Condensed Matter Physics 2012 (2012) 682125 DOI: https://doi.org/10.1155/2012/682125

T. Minami, K. Oohashi, S. Takata T. Mouri and N. Ogawa, Thin Solid Films 193-194 (1990) 721 DOI: https://doi.org/10.1016/0040-6090(90)90224-2

N. N. Dinh, T. Q. Trung, L. K. Binh, N. D. Khoa, V. T. M. Thuan, VNU J. Science, Mat. Phys. 24 (2008) 16

N. Akin, U. C. Baskose, B. Kinaci, M. Cakmak, S. Ozcelik, Appl. Phys. A 119 (2015) 965 DOI: https://doi.org/10.1007/s00339-015-9051-1

N. F.Mott and E. A. Davis, Electronic Process in Non-Crystalline Materials, Oxford University Press, Oxford, UK, 1979.

Downloads

Published

31-12-2015

How to Cite

[1]
N. T. Thuat, “Characterization of ZnO:Al deposited by co-sputtering for transparent conductive electrodes”, Comm. Phys., vol. 25, no. 4, p. 341, Dec. 2015.

Issue

Vol. 25 No. 4 (2015)

Section

Papers

License

Authors who publish with CIP agree with the following terms:
  1. The manuscript is not under consideration for publication elsewhere. When a manuscript is accepted for publication, the author agrees to automatic transfer of the copyright to the editorial office.
  2. The manuscript should not be published elsewhere in any language without the consent of the copyright holders. Authors have the right to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal’s published version of their work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
  3. Authors are encouraged to post their work online (e.g., in institutional repositories or on their websites) prior to or during the submission process, as it can lead to productive exchanges or/and greater number of citation to the to-be-published work (See The Effect of Open Access).
Crossref
Scopus
Google Scholar
Europe PMC
Received 29-11-2015
Published 31-12-2015

Most read articles by the same author(s)