Characterization of ZnO:Al deposited by co-sputtering for transparent conductive electrodes

Nguyen Tran Thuat, Bui Bao Thoa, Than Thi Cuc, Nguyen Minh Hieu, Hoang Ngoc Lam Huong, Bui Van Diep, Hoang Chi Hieu
Author affiliations

Authors

  • Nguyen Tran Thuat Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Bui Bao Thoa Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Than Thi Cuc Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Nguyen Minh Hieu Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Hoang Ngoc Lam Huong Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Bui Van Diep Nano and Energy Center, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam
  • Hoang Chi Hieu Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan District, Hanoi, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/25/4/7478

Keywords:

AZO thin film, co-sputtering method, resistivity, transmittance

Abstract

Aluminum doped zinc oxide was prepared by magnetron sputtering methods at room temperature using a ZnO ceramic target doped 2%wt by Al2O3. The optical transmittance of the films is higher than 80% in the visible range. A direct bandgap type was reached by controlling deposition conditions; the bandgap value was in the range between 3.2 eV and 4.2 eV. Good electrical and optical properties were obtained for the films deposited by an appropriate co-sputtering of ZnO and Al targets. These films with a resistivity, about 1.3´10-2W.cm, and a transmittance, higher than 80%, can be applicable for transparent conducting electrodes.

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Published

31-12-2015

How to Cite

[1]
N. T. Thuat, “Characterization of ZnO:Al deposited by co-sputtering for transparent conductive electrodes”, Comm. Phys., vol. 25, no. 4, p. 341, Dec. 2015.

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Papers
Received 29-11-2015
Published 31-12-2015

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