Vol. 24 No. 2 (2014)
Papers

Chemical Composition of High-T\(_{C} \text{ Ge}_{1 - x}\text{Mn}_{x}\) Nanocolumns Grown on \(\text{Ge}(001)\) Substrates

Le Thi Giang
Hong Duc University, 565 Quang Trung street, Thanh Hoa city, Vietnam
Nguyen Manh An
Hong Duc University, 565 Quang Trung street, Thanh Hoa city, Vietnam

Published 09-07-2014

Keywords

  • GeMn diluted magnetic semiconductors,
  • chemical composition,
  • high-T$_{C}$ nanocolumns,
  • thin film

How to Cite

Giang, L. T., & An, N. M. (2014). Chemical Composition of High-T\(_{C} \text{ Ge}_{1 - x}\text{Mn}_{x}\) Nanocolumns Grown on \(\text{Ge}(001)\) Substrates. Communications in Physics, 24(2), 163. https://doi.org/10.15625/0868-3166/24/2/4009

Abstract

By mean of molecular beam epitaxy (MBE) equipped with a reflexion high-energy electron diffraction (RHEED) technique, we have chosen an intermediate and appropriate substrate temperature of 130\(\r{}\)C to reproducibly synthetize high-T\(_{C}\) Ge\(_{1 - x}\)Mn\(_{x}\) nanocolumns phase. Laser Pulse Atom Probe Tomography (LP-APT) technique have been used to determine at atomic scale the chemical composition inside nanocolumns and also in the surrounding diluted matrix. The Mn concentration inside nanocolumns is found to be highly inhomogeneous, it is about 20\({\%}\) at the bottom and can increase up to \(\sim 40{\%}\) in the top near the surface region. The Mn concentration in the matrix is about 0.25\({\%}\) at the surface and can reach a highest value of $\sim $1{\%} in regions close to the interface.

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