Vol. 23 No. 3 (2013)
Papers

Lowest Excited-State Impurity Binding Energy in InGaN/GaN Parabolic QWW: Magnetic Field Effect

Haddou El Ghazi
Dhar El Mehrez Fez university
Bio
Anouar Jorio
LPS, Faculty of sciences, Dhar EL Mehrez, B.P 1796 Atlas Fez, Morocco
Izeddine Zorkani
LPS, Faculty of sciences, Dhar EL Mehrez, B.P 1796 Atlas Fez, Morocco

Published 26-09-2013

Keywords

  • Binding Energy,
  • Parabolic Wire,
  • Magnetic Effect

How to Cite

El Ghazi, H., Jorio, A., & Zorkani, I. (2013). Lowest Excited-State Impurity Binding Energy in InGaN/GaN Parabolic QWW: Magnetic Field Effect. Communications in Physics, 23(3), 275. https://doi.org/10.15625/0868-3166/23/3/2793

Abstract

In this paper, we have investigated the magnetic field effect on the lowest excited-state binding energy of hydrogenic shallow-donor impurity in wurtzite (In,Ga)N/GaN parabolic transversal-section quantum-well wire (PQWW) using the finite-difference method within the quasi-one-dimensional effective potential model. The calculations are performed within the framework of the effective mass approximation. A cylindrical QWW effective radius is taken into account to describe the lateral confinement strength. The numerical results show that: (i) the probability density is the largest on a circularity whose radius is the effective radius and (ii) the lowest excited-state binding energy is the largest when an impurity is located on this circularity while it starts to decrease as the impurity is away from the circularity.

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