Lowest Excited-State Impurity Binding Energy in InGaN/GaN Parabolic QWW: Magnetic Field Effect

Authors

  • Haddou El Ghazi Dhar El Mehrez Fez university
  • Anouar Jorio LPS, Faculty of sciences, Dhar EL Mehrez, B.P 1796 Atlas Fez, Morocco
  • Izeddine Zorkani LPS, Faculty of sciences, Dhar EL Mehrez, B.P 1796 Atlas Fez, Morocco

DOI:

https://doi.org/10.15625/0868-3166/23/3/2793

Keywords:

Binding Energy, Parabolic Wire, Magnetic Effect

Abstract

In this paper, we have investigated the magnetic field effect on the lowest excited-state binding energy of hydrogenic shallow-donor impurity in wurtzite (In,Ga)N/GaN parabolic transversal-section quantum-well wire (PQWW) using the finite-difference method within the quasi-one-dimensional effective potential model. The calculations are performed within the framework of the effective mass approximation. A cylindrical QWW effective radius is taken into account to describe the lateral confinement strength. The numerical results show that: (i) the probability density is the largest on a circularity whose radius is the effective radius and (ii) the lowest excited-state binding energy is the largest when an impurity is located on this circularity while it starts to decrease as the impurity is away from the circularity.

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Author Biography

Haddou El Ghazi, Dhar El Mehrez Fez university

Doctor, Laboratory of Physics state solid

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Published

26-09-2013

How to Cite

El Ghazi, H., Jorio, A., & Zorkani, I. (2013). Lowest Excited-State Impurity Binding Energy in InGaN/GaN Parabolic QWW: Magnetic Field Effect. Communications in Physics, 23(3), 275. https://doi.org/10.15625/0868-3166/23/3/2793

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Section

Papers