Piezoelectric Effect on the Electron Mobility in an Unintentionally Doped  GaN/AlGaN Surface Quantum Well

Nguyen Viet Minh

doi:10.15625/0868-3166/20/4/2526

Piezoelectric Effect on the Electron Mobility in an Unintentionally Doped GaN/AlGaN Surface Quantum Well

Nguyen Viet Minh

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Authors

Nguyen Viet Minh Communications in Physics, VAST

DOI:

https://doi.org/10.15625/0868-3166/20/4/2526

Abstract

We present a theoretical study the two-dimensional electron gas (2DEG) at low temperature in an unintentionally doped GaN/AlGaN surface quantum well, taking adequate account of the roughness-induced scattering mechansms and effect due to sheet polarization charges. Within model of surface quantum wells describes by an extended Fang-Howard wave function, we are able to derive an analytic expression for the self-consistent Hartree potential. Thus, we obtained simple expresion describing the enhancement of the 2DEG screening and unscreened potentials for different scattering sources. We studied the piezoelectric effect on the electron mobility in an unintentionally doped (UID) GaN/AlGaN surface quantum well.

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Published

01-11-2012

How to Cite

[1]

N. V. Minh, “Piezoelectric Effect on the Electron Mobility in an Unintentionally Doped GaN/AlGaN Surface Quantum Well”, Comm. Phys., vol. 20, no. 4, p. 301, Nov. 2012.

IEEE

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Issue

Vol. 20 No. 4 (2010)

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Papers

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