Vol. 24 No. 3S1 (2014)
Papers

Optical Properties of Silicon Nanoparticles Prepared by Laser Ablation Method in Various Media

Chu Anh Tuan
Institute of Materials Science, Vietnam Academy of Science and Technology and University of Engineering and Technology, Vietnam National University, Hanoi
Nguyen Thi Thu Trang
Institute of Materials Science, Vietnam Academy of Science and Technology
Le Anh Tu
Institute of Materials Science, Vietnam Academy of Science and Technology
Duong Thi Giang
Institute of Materials Science, Vietnam Academy of Science and Technology
Pham Hong Duong
Institute of Materials Science, Vietnam Academy of Science and Technology
Pham Thanh Huy
Bio

Published 13-11-2014

Keywords

  • silicon nanoparticles,
  • pulsed laser ablation,
  • time-dependent photoluminescence spectra

How to Cite

Tuan, C. A., Trang, N. T. T., Tu, L. A., Giang, D. T., Duong, P. H., & Huy, P. T. (2014). Optical Properties of Silicon Nanoparticles Prepared by Laser Ablation Method in Various Media. Communications in Physics, 24(3S1), 143–148. https://doi.org/10.15625/0868-3166/24/3S1/5466

Abstract

Bright photoluminescent silicon nanoparticles were successfully fabricated from porous silicon target in air and n-hexane using 532 nm line of YAG:Nd pulsed laser. The whole procedure was carried out at room temperature, in atmosphere. The morphology and composition of as-synthesized nanoparticles were characterized by SEM and EDS measurements. Their optical properties were investigated. The PL peak position of the as-synthesized Si nanoparticle ablated in air is slightly blue-shifted in comparison with those ablated in n-hexane, while it was almost no change of peak position of Si nanoparticles fabricated from p-Si in hexane and original p-Si wafer target. In contrast to PL intensity quenching of original p-Si sample and particles produced in air, those produced in n-hexane solvent exhibited an enhancement. The presence of dangling bonds or energy transfer from excited Si particles to oxygen molecules on the surface can be the cause of the quenching effect.

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