Vol. 20 No. 3 (2010)

Study of Self-diffusion in GaAs Crystal: Temperature Dependence

Vu Van Hung
Hanoi National University of Education
Phan Thi Thanh Hong
Hanoi Pedagogic University No.~2
Nguyen Thanh Hai
Hanoi University of Technology

Published 15-08-2012

How to Cite

Hung, V. V., Hong, P. T. T., & Hai, N. T. (2012). Study of Self-diffusion in GaAs Crystal: Temperature Dependence. Communications in Physics, 20(3), 227. https://doi.org/10.15625/0868-3166/20/3/2272


The self-diffusion of Ga and As atoms in GaAs crystal with the zince-blende structure (ZnS) is investigated by using the statistical moment method (SMM). The activation energy $(Q)$, diffusion coefficient $(D)$, and pre-exponential factor ($D_0$) are expressed by analytical closed expressions. The present analytical formulas are including the anharmonic effects of the lattice vibrations. The obtained results  are applied to GaAs crystal and the SMM calculations of $Q, D$ and $D_0$  are in agreement with the experimental data.


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