Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects

Van Tuan Truong, Quoc Khanh Nguyen, Van Tai Vo, Khan Linh Dang
Author affiliations

Authors

  • Van Tuan Truong University of Science, Vietnam National University Ho Chi Minh City, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City, Viet Nam and University of Tran Dai Nghia,189-Nguyen Oanh Street, Go Vap District, Ho Chi Minh City, Viet Nam}
  • Quoc Khanh Nguyen University of Science, Vietnam National University Ho Chi Minh City, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City, Viet Nam
  • Van Tai Vo University of Science, Vietnam National University Ho Chi Minh City, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City, Viet Nam
  • Khan Linh Dang Ho Chi Minh City University of Education, 280 An Duong Vuong Street, 5th District, Ho Chi Minh City, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/30/2/14446

Keywords:

Magnetoresistance, Exchange-correlation effects, Metal–insulator transition

Abstract

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.

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Published

26-05-2020

How to Cite

[1]
V. T. Truong, Q. K. Nguyen, V. T. Vo, and K. L. Dang, “Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects”, Comm. Phys., vol. 30, no. 2, p. 123, May 2020.

Issue

Vol. 30 No. 2 (2020)

Section

Papers

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Received 27-09-2019
Accepted 25-02-2020
Published 26-05-2020