Transport Properties of a GaAs/InGaAs/GaAs Quantum Well:  Temperature, Magnetic Field and Many-body Effects

Van Tuan Truong; Quoc Khanh Nguyen; Van Tai Vo; Khan Linh Dang

doi:10.15625/0868-3166/30/2/14446

Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects

Van Tuan Truong, Quoc Khanh Nguyen, Van Tai Vo, Khan Linh Dang

Author affiliations

Authors

Van Tuan Truong University of Science, Vietnam National University Ho Chi Minh City, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City, Viet Nam and University of Tran Dai Nghia,189-Nguyen Oanh Street, Go Vap District, Ho Chi Minh City, Viet Nam}
Quoc Khanh Nguyen University of Science, Vietnam National University Ho Chi Minh City, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City, Viet Nam
Van Tai Vo University of Science, Vietnam National University Ho Chi Minh City, 227-Nguyen Van Cu Street, 5th District, Ho Chi Minh City, Viet Nam
Khan Linh Dang Ho Chi Minh City University of Education, 280 An Duong Vuong Street, 5th District, Ho Chi Minh City, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/30/2/14446

Keywords:

Magnetoresistance, Exchange-correlation effects, Metal–insulator transition

Abstract

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogenous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.

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Published

26-05-2020

How to Cite

[1]

V. T. Truong, Q. K. Nguyen, V. T. Vo, and K. L. Dang, “Transport Properties of a GaAs/InGaAs/GaAs Quantum Well: Temperature, Magnetic Field and Many-body Effects”, Comm. Phys., vol. 30, no. 2, p. 123, May 2020.

IEEE

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Issue

Vol. 30 No. 2 (2020)

Section

Papers

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