Two Band Model for Diluted Magnetic Semiconductors: Study of the Ferromagnetic Transition Temperature

Vu Kim Thai; Hoang Anh Tuan

doi:10.15625/0868-3166/21/2/106

Two Band Model for Diluted Magnetic Semiconductors: Study of the Ferromagnetic Transition Temperature

Vu Kim Thai, Hoang Anh Tuan

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Authors

Vu Kim Thai
Hoang Anh Tuan

DOI:

https://doi.org/10.15625/0868-3166/21/2/106

Abstract

The ferromagnetic transition temperature (T_c) of a two band model for diluted magnetic semiconductors (DMS) is calculated by using the coherent potential approximation (CPA). It is shown that T_c is strongly parameter dependent on density of the carriers, magnetic coupling constants, and the hopping terms. The maximal T_c of the two band model is found when both impurity bands fully overlap and this value is approximately twice larger than the highest T_c obtained in the single band model.

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Published

28-06-2011

How to Cite

[1]

V. K. Thai and H. A. Tuan, “Two Band Model for Diluted Magnetic Semiconductors: Study of the Ferromagnetic Transition Temperature”, Comm. Phys., vol. 21, no. 2, p. 125, Jun. 2011.

IEEE

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Issue

Vol. 21 No. 2 (2011)

Section

Papers

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