Effect of 0.5 at.% indium on thermoelectric properties of gallium doped-zinc oxide bulk

Anh Tuan Thanh Pham, Ly Thi Trinh, Ngoc Kim Pham, Truong Hung Nguyen, Dung Van Hoang, Hoa Thi Lai, Hanh Kieu Thi Ta, Thu Bao Nguyen Le, Ngoc Van Le, Vinh Cao Tran, Thang Bach Phan
Author affiliations

Authors

  • Anh Tuan Thanh Pham Laboratory of Advanced Materials, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Ly Thi Trinh Faculty of Materials Science and Technology, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Ngoc Kim Pham Faculty of Materials Science and Technology, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Truong Hung Nguyen Laboratory of Advanced Materials, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Dung Van Hoang Laboratory of Advanced Materials, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Hoa Thi Lai Faculty of Materials Science and Technology, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Hanh Kieu Thi Ta Faculty of Materials Science and Technology, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Thu Bao Nguyen Le Department of Mathematics and Physics, University of Information Technology, Vietnam National University (VNU-HCM), quarter 6, Linh Trung ward, Thu Duc district, Ho Chi Minh city, Viet Nam
  • Ngoc Van Le Faculty of Physics – Engineering physics, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Vinh Cao Tran Laboratory of Advanced Materials, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam
  • Thang Bach Phan Laboratory of Advanced Materials, University of Science, Vietnam National University (VNU-HCM), 227 Nguyen Van Cu street, district 5, Ho Chi Minh city, Viet Nam

DOI:

https://doi.org/10.15625/2525-2518/58/2/13966

Keywords:

Thermoelectric materials, Ga-doped ZnO bulk, In addition, power factor

Abstract

Thermoelectrics (TE) is well-known as a non-smoke technology for electricity production from waste heat and for greenhouse effect reduction. Enhancing power factor (PF = S2sigma, where S is Seebeck coefficient and sigma is electrical conductivity) and figure of merit of TE materials to achieve high-performance TE devices has attracted much scientific attention. Doping foreign elements into host bulk structure is a basic and traditional solution to modify the thermoelectric properties of materials. In this work, we use small amount of 0.5 at.% In as dopant which is incorporated into Ga-doped ZnO (GZO) bulk by using solid-state reaction method. The effects of In addition on electrical and thermoelectric characterizations of Ga-doped ZnO bulk are discussed in detail. As a result, the electrical conductivity of the IGZO bulk increases more than 20% as compared to the GZO bulk. The Seebeck coefficient decreases insignificantly, which leads to enhancing power factor by 55% from 184.4 uW/mK2 (GZO) to 285.2 uW/mK2 (IGZO) at 500oC. The results open possibility to enhance the figure of merit of pure and doped ZnO material.

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References

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Published

20-03-2020

How to Cite

[1]
A. T. T. Pham, “Effect of 0.5 at.% indium on thermoelectric properties of gallium doped-zinc oxide bulk”, Vietnam J. Sci. Technol., vol. 58, no. 2, pp. 175–180, Mar. 2020.

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Section

Materials

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