SILICON NANOWIRES FABRICATION BY PHYSICAL METHOD

Nguyen Thi Thuy

Abstract


Silicon nanowires (Si NWs) were fabricated on Si(111) surfaces by both thermal evaporation and sputtering methods. Au nanocrystals were used as the metal catalysts and they were fabricated by electron beam evaporation. The field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. The diameters of the Si NWs were measured to be about few tens of nanometer. The mechanism of the nanowires formation by these methods was also discussed.


Keywords


silicon nanowire, thermal evaporation, sputtering, catalyst.

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DOI: https://doi.org/10.15625/2525-2518/54/5A/12074 Display counter: Abstract : 37 views. PDF : 64 views.

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Published by Vietnam Academy of Science and Technology