SCAPS SIMULATION OF ZnO/In2S3/Cu2Sn3S7/Mo SOLAR CELL

Phung Dinh Hoat

Abstract


Operation of ZnO/In2S3/Cu2Sn3S7/Mo solar cell was calculated using the SCAPS software. Main input data were energy band gap Eg, absorption coefficient α, thickness d, mobility μ and carrier concentration n of the ZnO, In2S3 and Cu2Sn3S7 films obtained from experiments. In all calculation processes, parameters of the ZnO (Eg = 3.3 eV, d = 0.2 μm, μn = 100 cm2/(Vs)) and In2S3 (Eg = 2.96 eV, d = 0.1 μm, μn = 50 cm2/(Vs)) films were kept constant. Effects of thickness d and carrier concentration np of the Cu2Sn3S7 (αmax = 4.2×104 cm-1, Eg = 1.46 eV) film on Voc, Jsc, Vm, Jm, FF and η of the cell were investigated in the ranges of d = 0.3 – 3.5 μm and np = 1017 – 1020 cm-3. Under the standard AM 1.5G illumination at 300 K, the ZnO/In2S3/Cu2Sn3S7/Mo solar cell having Rs = 10 Ω.cm2 and Rsh = 1×106 Ω.cm2 using Cu2Sn3S7 film having d = 2 μm, αmax = 4.2×104 cm-1, Eg = 1.46 eV, μp = 15 cm2/(Vs) and np = 1020 cm-3 has the highest conversion efficiency ηmax = 18.0 % with Voc = 0.98 V, Jsc = 31.2 mA/cm2, Vm = 0.62 V, Jm = 28.8 mA/cm2 and FF = 58.8 %.


Keywords


Cu2Sn3S7, SCAPS, Solar cell.

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DOI: https://doi.org/10.15625/2525-2518/54/1A/11824 Display counter: Abstract : 101 views. PDF : 139 views.

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Published by Vietnam Academy of Science and Technology