Hall Effect on the Doped Semiconductor Superlattice with an In-plane Magnetic Field Under Influence of an Intense Electromagnetic Wave

Nguyen Quang Bau; Bui Dinh Hoi; Tran Cong Phong

doi:10.15625/0868-3166/24/3S1/5135

Hall Effect on the Doped Semiconductor Superlattice with an In-plane Magnetic Field Under Influence of an Intense Electromagnetic Wave

Nguyen Quang Bau, Bui Dinh Hoi, Tran Cong Phong

Author affiliations

Authors

Nguyen Quang Bau Faculty of Physics, Hanoi University of Science, Vietnam National University, Hanoi
Bui Dinh Hoi Department of Physics, National University of Civil Engineering, Hanoi,
Tran Cong Phong Center for Theoretical and Computational Physics, Hue University's College of Education, Hue city, Vietnam

DOI:

https://doi.org/10.15625/0868-3166/24/3S1/5135

Keywords:

Hall effect, magnetoresistance, electron-phonon interaction, doping superlattice

Abstract

The Hall effect is studied theoretically in a doped semiconductor superlattice (DSSL) subjected to a crossed dc electric field and magnetic field in the presence of an intense electromagnetic wave (EMW). By using the quantum kinetic equation for electrons interacting with acoustic phonons at low temperature, we obtain expressions for the magnetoresistance as well as the Hall coefficient in dependence on the external fields and characteristic parameters of the DSSL. Analytical results are numerically evaluated for the GaAs:Si/GaAs:Be DSSL. The dependence of the magnetoresistance on the magnetic field is consistent with the result obtained for some two-dimensional electron systems. The Hall coefficient depends weakly on the magnetic field and its value in the presence of the EMW is smaller than that of the case without EMW.

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Published

28-10-2014

How to Cite

[1]

N. Q. Bau, B. D. Hoi and T. C. Phong, Hall Effect on the Doped Semiconductor Superlattice with an In-plane Magnetic Field Under Influence of an Intense Electromagnetic Wave, Comm. Phys. 24 (2014) 45–50. DOI: https://doi.org/10.15625/0868-3166/24/3S1/5135.

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Issue

Vol. 24 No. 3S1 (2014)

Section

Papers

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